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2SC1678 Specs and Replacement

Type Designator: 2SC1678

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 3 W

Maximum Collector-Base Voltage |Vcb|: 65 V

Maximum Collector-Emitter Voltage |Vce|: 65 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 120 MHz

Collector Capacitance (Cc): 45 pF

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO220

 2SC1678 Substitution

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2SC1678 datasheet

 ..1. Size:61K  toshiba

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2SC1678

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 ..2. Size:185K  inchange semiconductor

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2SC1678

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1678 DESCRIPTION Silicon NPN planar type High breakdown voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Medium power amplifier applications Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE... See More ⇒

 8.1. Size:298K  nec

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2SC1678

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2SC1678

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Detailed specifications: 2SC1674L, 2SC1674M, 2SC1675, 2SC1675K, 2SC1675L, 2SC1675M, 2SC1676, 2SC1677, A940, 2SC1679, 2SC168, 2SC1680, 2SC1681, 2SC1682, 2SC1683, 2SC1683A, 2SC1684

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