2SC1680 Datasheet and Replacement
Type Designator: 2SC1680
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO128
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2SC1680 Datasheet (PDF)
2sc1688 e.pdf

Transistor2SC1688Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesSmall common emitter reverse transfer capacitance Cre.High transition frequency fT.Center at the emitter pin.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.20.45 0.1 0.45 0.1Collector to base voltage VCBO 50 V1.27 1.27
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: DTB201 | KTC2553 | SK3244 | BCM846BS | MMBT3642 | BCR198W | 2SD126H
Keywords - 2SC1680 transistor datasheet
2SC1680 cross reference
2SC1680 equivalent finder
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History: DTB201 | KTC2553 | SK3244 | BCM846BS | MMBT3642 | BCR198W | 2SD126H



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