2SC1785
Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC1785
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100
W
Maximum Collector-Base Voltage |Vcb|: 200
V
Maximum Emitter-Base Voltage |Veb|: 6
V
Maximum Collector Current |Ic max|: 15
A
Max. Operating Junction Temperature (Tj): 175
°C
Transition Frequency (ft): 5
MHz
Collector Capacitance (Cc): 165
pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package:
TO3
2SC1785
Transistor Equivalent Substitute - Cross-Reference Search
2SC1785
Datasheet (PDF)
..1. Size:177K inchange semiconductor
2sc1785.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1785DESCRIPTIONCollector-Emitter Sustaining Voltage-V = 200V(Min)CEO(SUS)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAutomotive ignitionSwitching regulatorMotor control applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA
8.4. Size:178K inchange semiconductor
2sc1783.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1783DESCRIPTIONCollector-Emitter Sustaining Voltage-V = 120V(Min)CEO(SUS)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAutomotive ignitionSwitching regulatorMotor control applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA
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