2SC1811 Transistor. Datasheet pdf. Equivalent

2SC1811 Transistor Equivalent Substitute - Cross-Reference Search

2SC1811 Datasheet (PDF)

4.1. 2sc1815lt1.pdf Size:122K _update

2SC1815LT1 NPN EPITAXIAL SILICON TRANSISTOR Package:SOT-23 * Complement to 2SA1015 * Collector Current :Ic=150mA ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo 60 V Collector-Emitter Voltage Vceo 50 V Emitter-Base Voltage Vebo 5 V PIN: 1 2 3 Collector Current Ic 150 mA STYLE Collector Dissipation Ta=25℃* PD 225 mW NO

4.2. 2sc1819m.pdf Size:84K _update

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1819M DESCRIPTION ·With TO-220 package ·High VCEO ·Large PC APPLICATIONS ·For use in line-operated color TV chroma output circuits. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Emitter Absolute maximum ratings (Ta

4.3. 2sc1815-bl-gr-o-y.pdf Size:368K _update

2SC1815-O MCC 2SC1815-Y Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SC1815-GR CA 91311 Phone: (818) 701-4933 2SC1815-BL Fax: (818) 701-4939 Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF NPN Silicon Amplifier and General Purpose Applications. • Capable of 0.4Watts of Power Dissipation. Epitaxial

4.4. 2sc1815.pdf Size:272K _toshiba

2SC1815 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815 Audio Frequency General Purpose Amplifier Applications Unit: mm Driver Stage Amplifier Applications High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max) � Excellent hFE linearity: hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) � Low n

4.5. 2sc1815-t.pdf Size:213K _toshiba

4.6. 2sc1815l.pdf Size:308K _toshiba

2SC1815(L) TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815(L) Audio Frequency Voltage Amplifier Applications Unit: mm Low Noise Amplifier Applications � High breakdown voltage, high current capability : V = 50 V (min), I = 150 mA (max) CEO C � Excellent linearity of h FE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : h (I = 0.1 mA)/h (I = 2 mA) = 0.95

4.7. 2sc1815.pdf Size:227K _utc

UNISONIC TECHNOLOGIES CO., LTD 2SC1815 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR ? FEATURES * Collector-Emitter voltage: BV =50V CEO * Collector current up to 150mA * High h linearity FE * Complimentary to UTC 2SA1015 ? SYMBOL ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2

4.8. 2sc1819.pdf Size:37K _no

4.9. 2sc1816.pdf Size:217K _sony

4.10. 2sc1817.pdf Size:137K _sony

4.11. 2sc1810.pdf Size:293K _sony

4.12. 2sc1815-m.pdf Size:168K _microelectronics

4.13. 2sc1819m.pdf Size:56K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1819M DESCRIPTION ·With TO-220 package ·High VCEO ·Large PC APPLICATIONS ·For use in line-operated color TV chroma output circuits. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Emitter Absolute maximum ratings (Ta=2

4.14. 2sc1815m.pdf Size:729K _blue-rocket-elect

2SC1815M(BR3DG1815M) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package. 特征 / Features 耐压高,电流大,有极好的 h 特性,低噪声系数。 FE High voltage and high current, excellent hFE linearity ,low noise. 用途 / Applications 用于普通低频放大,激励级放大�

4.15. 2sc1815.pdf Size:959K _kexin

SMD Type or SMD Type TransistICs NPN Transistors 2SC1815 SOT-23 Unit: mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Power dissipation 1 2 +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCEO 50 V Emitter to Base Voltage VEBO 5

4.16. 2sc1815.pdf Size:544K _shenzhen-tuofeng-semi

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC1815 TRANSISTOR (NPN) FEATURES Power dissipation 1. BASE 2. EMITTER MARKING : 2SC1815=HF 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base

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BJT: 2SB1308-R | 2SB1308-Q | 2SB1308-P | 2SB1302T-TD-E | 2SB1302S-TD-E | 2SB1260-R | 2SB1260-Q | 2SB1260-P | 2SB1216T-TL-H | 2SB1216T-TL-E | 2SB1216T-H | 2SB1216T-E | 2SB1216S-TL-H | 2SB1216S-TL-E | 2SB1216S-H | 2SB1216S-E | 2SB1205T-TL-E | 2SB1205S-TL-E | 2SB1204T-TL-E | 2SB1204T-E |