2SC1811 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC1811
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 240 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 125 MHz
Collector Capacitance (Cc): 2.8 pF
Forward Current Transfer Ratio (hFE), MIN: 150
Noise Figure, dB: -
Package: TO92
2SC1811 Transistor Equivalent Substitute - Cross-Reference Search
2SC1811 Datasheet (PDF)
4.1. 2sc1815lt1.pdf 
Size:122K _update
2SC1815LT1 NPN EPITAXIAL SILICON TRANSISTOR Package:SOT-23 * Complement to 2SA1015 * Collector Current :Ic=150mA ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo 60 V Collector-Emitter Voltage Vceo 50 V Emitter-Base Voltage Vebo 5 V PIN: 1 2 3 Collector Current Ic 150 mA STYLE Collector Dissipation Ta=25℃* PD 225 mW NO
4.2. 2sc1815-bl-gr-o-y.pdf Size:368K _update
2SC1815-O MCC 2SC1815-Y Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SC1815-GR CA 91311 Phone: (818) 701-4933 2SC1815-BL Fax: (818) 701-4939 Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF NPN Silicon Amplifier and General Purpose Applications. • Capable of 0.4Watts of Power Dissipation. Epitaxial
4.3. 2sc1819m.pdf Size:84K _update
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1819M DESCRIPTION ·With TO-220 package ·High VCEO ·Large PC APPLICATIONS ·For use in line-operated color TV chroma output circuits. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Emitter Absolute maximum ratings (Ta
4.4. 2sc1815-t.pdf Size:213K _toshiba
4.5. 2sc1815l.pdf Size:308K _toshiba
2SC1815(L) TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815(L) Audio Frequency Voltage Amplifier Applications Unit: mm Low Noise Amplifier Applications • High breakdown voltage, high current capability : V = 50 V (min), I = 150 mA (max) CEO C • Excellent linearity of h FE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : h (I = 0.1 mA)/h (I = 2 mA)
4.6. 2sc1815.pdf Size:272K _toshiba
2SC1815 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815 Audio Frequency General Purpose Amplifier Applications Unit: mm Driver Stage Amplifier Applications High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max) • Excellent hFE linearity: hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
4.7. 2sc1815.pdf Size:227K _utc
UNISONIC TECHNOLOGIES CO., LTD 2SC1815 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR ? FEATURES * Collector-Emitter voltage: BV =50V CEO * Collector current up to 150mA * High h linearity FE * Complimentary to UTC 2SA1015 ? SYMBOL ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2
4.8. 2sc1819.pdf Size:37K _no
4.9. 2sc1816.pdf Size:217K _sony
4.10. 2sc1810.pdf Size:293K _sony
4.11. 2sc1817.pdf Size:137K _sony
4.12. 2sc1815-m.pdf Size:168K _microelectronics
4.13. 2sc1819m.pdf Size:56K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1819M DESCRIPTION ·With TO-220 package ·High VCEO ·Large PC APPLICATIONS ·For use in line-operated color TV chroma output circuits. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Emitter Absolute maximum ratings (Ta=2
4.14. 2sc1815m.pdf Size:729K _blue-rocket-elect
2SC1815M(BR3DG1815M) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package. 特征 / Features 耐压高,电流大,有极好的 h 特性,低噪声系数。 FE High voltage and high current, excellent hFE linearity ,low noise. 用途 / Applications 用于普通低频放大,激励级放大
4.15. 2sc1815.pdf Size:959K _kexin
SMD Type or SMD Type TransistICs NPN Transistors 2SC1815 SOT-23 Unit: mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Power dissipation 1 2 +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCEO 50 V Emitter to Base Voltage VEBO 5
4.16. 2sc1815.pdf Size:544K _shenzhen-tuofeng-semi
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC1815 TRANSISTOR (NPN) FEATURES Power dissipation 1. BASE 2. EMITTER MARKING : 2SC1815=HF 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
