2SC1846 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC1846
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.2 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 35 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO126
2SC1846 Transistor Equivalent Substitute - Cross-Reference Search
2SC1846 Datasheet (PDF)
2sc1846.pdf
Power Transistors2SC1846Silicon NPN epitaxial planar typeFor medium output power amplificationUnit: mm8.0+0.50.13.20.2Complementary to 2SA0885 3.160.1 Features Low collector-emitter saturation voltage VCE(sat) Output of 3 W can be obtained by a complementary pair with2SA0885 TO-126B package which requires no insulation plate for installa-tion t
2sc1846.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC1846 DESCRIPTION With TO-126 package Complement to type 2SA885 Low collector saturation APPLICATIONS For medium output power amplification PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute Maximun Ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITV
2sc1846 3da1846.pdf
2SC1846(3DA1846) NPN /SILICON NPN TRANSISTOR : Purpose: Medium power amplifier. :V , 2SA885(3CA885) 3W CE(sat)Features: Low V ,3W output in complementary pair with 2SA885(3CA885). CE(sat)/Absolute maximum ratings(Ta=25) Symbol Rating Unit V 45 V
2sc1846.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1846DESCRIPTIONSilicon NPN epitaxial planar typeLow collector to emitter saturation voltageOutput of 3W can be obtained by a complementarywith 2SA0885100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSuited for medium output power amplifier
2sc1847.pdf
Power Transistors2SC1847Silicon NPN epitaxial planar typeFor medium output power amplificationUnit: mm8.0+0.50.13.20.2Complementary to 2SA0886 3.160.1 Features Output of 4 W can be obtained by a complementary pair with2SA0886 TO-126B package which requires no insulation plate for installa-tion to the heat sink Absolute Maximum Ratings Ta = 25
2sc1847.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC1847 DESCRIPTION With TO-126 package Complement to type 2SA886 Low collector saturation APPLICATIONS For medium output power amplification PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute Maximun Ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITV
2sc1848.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1848DESCRIPTIONSilicon NPN epitaxial planarHigh voltageComplement to Type 2SA887Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 70 VCB
2sc1847.pdf
isc Silicon NPN Power Transistor 2SC1847DESCRIPTIONHigh Collector Current-I = 1.5ACLow Saturation Voltage: V = 1V(Max)@ I = 2.0A, I = 0.2ACE(sat) C BGood Linearity of hFEComplement to Type 2SA0886Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSuited for the output stage of 3 watts audio amplifier,voltage regul
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
