2SC1846 - Даташиты. Аналоги. Основные параметры

Power Transistors 2SC1846 Silicon NPN epitaxial planar type For medium output power amplification Unit mm 8.0+0.5 0.1 3.2 0.2 Complementary to 2SA0885 3.16 0.1 Features Low collector-emitter saturation voltage VCE(sat) Output of 3 W can be obtained by a complementary pair with 2SA0885 TO-126B package which requires no insulation plate for installa- tion t

JMnic Product Specification Silicon NPN Power Transistors 2SC1846 DESCRIPTION With TO-126 package Complement to type 2SA885 Low collector saturation APPLICATIONS For medium output power amplification PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute Maximun Ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT V

2SC1846(3DA1846) NPN /SILICON NPN TRANSISTOR Purpose Medium power amplifier. V , 2SA885(3CA885) 3W CE(sat) Features Low V ,3W output in complementary pair with 2SA885(3CA885). CE(sat) /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 45 V

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1846 DESCRIPTION Silicon NPN epitaxial planar type Low collector to emitter saturation voltage Output of 3W can be obtained by a complementary with 2SA0885 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Suited for medium output power amplifier

Power Transistors 2SC1847 Silicon NPN epitaxial planar type For medium output power amplification Unit mm 8.0+0.5 0.1 3.2 0.2 Complementary to 2SA0886 3.16 0.1 Features Output of 4 W can be obtained by a complementary pair with 2SA0886 TO-126B package which requires no insulation plate for installa- tion to the heat sink Absolute Maximum Ratings Ta = 25

JMnic Product Specification Silicon NPN Power Transistors 2SC1847 DESCRIPTION With TO-126 package Complement to type 2SA886 Low collector saturation APPLICATIONS For medium output power amplification PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute Maximun Ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT V

Transistors 2SC184

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1848 DESCRIPTION Silicon NPN epitaxial planar High voltage Complement to Type 2SA887 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 70 V CB

isc Silicon NPN Power Transistor 2SC1847 DESCRIPTION High Collector Current-I = 1.5A C Low Saturation Voltage V = 1V(Max)@ I = 2.0A, I = 0.2A CE(sat) C B Good Linearity of h FE Complement to Type 2SA0886 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Suited for the output stage of 3 watts audio amplifier, voltage regul