2SC1885 PDF and Equivalents Search

 

2SC1885 Specs and Replacement


   Type Designator: 2SC1885
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 0.75 W
   Maximum Collector-Base Voltage |Vcb|: 150 V
   Maximum Collector-Emitter Voltage |Vce|: 150 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 150
   Noise Figure, dB: -
   Package: TO92
 

 2SC1885 Substitution

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2SC1885 datasheet

 8.1. Size:35K  hitachi
2sc1881.pdf pdf_icon

2SC1885

2SC1881(K) Silicon NPN Triple Diffused Application High gain amplifier power switching Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 1 3. Emitter 6.8 k 400 2 3 (Typ) (Typ) 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 7V Collector current I... See More ⇒

 8.2. Size:215K  inchange semiconductor
2sc1881k.pdf pdf_icon

2SC1885

isc Silicon NPN Darlington Power Transistor 2SC1881K DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 1.5A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 1.2V(Max)@ I = 2.5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for High g... See More ⇒

 8.3. Size:214K  inchange semiconductor
2sc1881.pdf pdf_icon

2SC1885

isc Silicon NPN Darlington Power Transistor 2SC1881 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 1.5A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 1.2V(Max)@ I = 2.5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for High ga... See More ⇒

 8.4. Size:186K  inchange semiconductor
2sc1880.pdf pdf_icon

2SC1885

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SC1880 DESCRIPTION High DC Current Gain Collector-Emitter Sustaining Voltage- V = 120V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and ... See More ⇒

Detailed specifications: 2SC1881 , 2SC1881K , 2SC1882 , 2SC1882H , 2SC1883 , 2SC1883K , 2SC1884 , 2SC1884H , 2N5551 , 2SC1886 , 2SC1887 , 2SC1888 , 2SC1889 , 2SC189 , 2SC1890 , 2SC1890A , 2SC1891 .

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