2SC1971 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC1971
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 12 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 175 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO220
2SC1971 Transistor Equivalent Substitute - Cross-Reference Search
2SC1971 Datasheet (PDF)
2sc1971.pdf
isc Silicon NPN Power Transistor 2SC1971DESCRIPTIONHigh Power Gain-: G 7dB, P = 6W; V = 13.5Vpe O CEHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for RF power amplifiers on VHF band mobile radioapplications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Bas
2sc1975.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1975DESCRIPTIONCollector-Base Breakdown Voltage: V =160V(Min)(BR)CBOWithstands worst overload conditions.100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesign for used in transceiver power output applicationsABSOLUTE MAXIMUM RATINGS(T =25
2sc1970.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1970DESCRIPTIONHigh Power Gain-: G 9.2dB,f= 175MHz, P = 1W; V = 13.5Vpe O CCHigh Reliability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for RF power amplifiers on VHF band mobile radioapplications.ABSOLUTE MAXIMUM RATING
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
