2SC1984 Datasheet and Replacement
Type Designator: 2SC1984
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 500
Noise Figure, dB: -
Package: TO220
2SC1984 Substitution
2SC1984 Datasheet (PDF)
2sc1980.pdf

Transistor2SC1980Silicon NPN epitaxial planer typeFor high breakdown voltage low-noise amplificationUnit: mmComplementary to 2SA9215.0 0.2 4.0 0.2FeaturesHigh collector to emitter voltage VCEO.Low noise voltage NV.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 120 V +0.2 +0.20.45 0.1 0.45 0.1Collector to emitt
2sc1980 e.pdf

Transistor2SC1980Silicon NPN epitaxial planer typeFor high breakdown voltage low-noise amplificationUnit: mmComplementary to 2SA9215.0 0.2 4.0 0.2FeaturesHigh collector to emitter voltage VCEO.Low noise voltage NV.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 120 V +0.2 +0.20.45 0.1 0.45 0.1Collector to emitt
2sc1983.pdf

2SC1983 NPN SILICON DARLINGTON TRANSISTORSWITCHING REGULATORS PWM INVERTERSSOLENOID AND RELAY DRIVERSSC-65ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 60 V Collector Current (DC) IC 3 A Collector Dissipation (Tc=25 PC 30 W Junction Temperature Tj 150
Datasheet: 2SC1978 , 2SC198 , 2SC1980 , 2SC1981 , 2SC1981S , 2SC1982 , 2SC1982S , 2SC1983 , B772 , 2SC1984A , 2SC1985 , 2SC1986 , 2SC1987 , 2SC1988 , 2SC1989 , 2SC198A , 2SC199 .
History: BLS3135-10 | BC857DW
Keywords - 2SC1984 transistor datasheet
2SC1984 cross reference
2SC1984 equivalent finder
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History: BLS3135-10 | BC857DW



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