2SC198A Datasheet. Specs and Replacement

Type Designator: 2SC198A  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.8 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 175 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO33-1

 2SC198A Substitution

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2SC198A datasheet

 8.1. Size:37K  panasonic

 2sc1980.pdf pdf_icon

2SC198A

Transistor 2SC1980 Silicon NPN epitaxial planer type For high breakdown voltage low-noise amplification Unit mm Complementary to 2SA921 5.0 0.2 4.0 0.2 Features High collector to emitter voltage VCEO. Low noise voltage NV. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to emitt... See More ⇒

 8.2. Size:41K  panasonic

 2sc1980 e.pdf pdf_icon

2SC198A

Transistor 2SC1980 Silicon NPN epitaxial planer type For high breakdown voltage low-noise amplification Unit mm Complementary to 2SA921 5.0 0.2 4.0 0.2 Features High collector to emitter voltage VCEO. Low noise voltage NV. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to emitt... See More ⇒

 8.3. Size:64K  wingshing

 2sc1983.pdf pdf_icon

2SC198A

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 8.4. Size:83K  sanken-ele

 2sc1985 2sc1986.pdf pdf_icon

2SC198A

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Detailed specifications: 2SC1983, 2SC1984, 2SC1984A, 2SC1985, 2SC1986, 2SC1987, 2SC1988, 2SC1989, BC558, 2SC199, 2SC1990, 2SC1991, 2SC1992, 2SC1993, 2SC1994, 2SC1995, 2SC1996

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