2SC2121 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC2121
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 750 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO3
2SC2121 Transistor Equivalent Substitute - Cross-Reference Search
2SC2121 Datasheet (PDF)
2sc2120.pdf
2SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2120 Audio Power Amplifier Applications Unit: mm High hFE: h = 100~320 FE (1) 1 watts amplifier applications. Complementary to 2SA950 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 35 VCollector-emitter voltage VCEO 30 VEmitter-base vo
2sc2120-y.pdf
MCCTM Micro Commercial Components2SC2120-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SC2120-YPhone: (818) 701-4933Fax: (818) 701-4939Features Complementary Pair With 2SA950 Epoxy meets UL 94 V-0 flammability ratingNPN Silicon Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant ("P" Suffix designates TransistorsRoHS Compliant
2sc2120-o.pdf
MCCTM Micro Commercial Components2SC2120-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SC2120-YPhone: (818) 701-4933Fax: (818) 701-4939Features Complementary Pair With 2SA950 Epoxy meets UL 94 V-0 flammability ratingNPN Silicon Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant ("P" Suffix designates TransistorsRoHS Compliant
2sc2120.pdf
2SC2120 0.8 A , 35 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High DC Current Gain G H Complementary to 2SA950 1Emitter 1112Collector 222333J 3Base CLASSIFICATION OF hFE A DMillimeter REF. Product-Rank 2SC2120-O 2SC2120-Y Min. Max
2sc2120.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors2SC2120 TRANSISTOR (NPN)TO 92 FEATURES 1. EMITTER High DC Current Gain Complementary to 2SA950 2. COLLECTOR3. BASE Equivalent Circuit C2120=Device code C2120 Solid dot=Green molding compound device, XXX if none,the normal deviceXXX=Code 1ORDERING INFORMATION Pa
2sc2122.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2122DESCRIPTIONWith TO-3 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for color TV horizontal deflection driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 800 VCBO
2sc2123.pdf
isc Silicon NPN Power Transistor 2SC2123DESCRIPTIONHigh Collector-Base Breakdown Voltage-: V = 1000V (Min)(BR)CBOHigh Current CapabilityHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal output and high power switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB
2sc2120.pdf
isc Silicon NPN Transistor 2SC2120DESCRIPTIONHigh hFE(1)=100-3201 Watts Amplifier ApplicationsComplement to Type 2SA950Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio power amplifier ApplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 35 VCBOV Collector-Emitter
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
