2SC2142 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC2142
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.165 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 100 °C
Transition Frequency (ft): 4500 MHz
Collector Capacitance (Cc): 0.7 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO72
2SC2142 Transistor Equivalent Substitute - Cross-Reference Search
2SC2142 Datasheet (PDF)
2sc2351 2sc2149 2sc4092 ne02133 ne02135 ne02139.pdf
NEC's NPN SILICON HIGH NE021FREQUENCY TRANSISTOR SERIESFEATURES HIGH INSERTION GAIN: 18.5 dB at 500 MHz LOW NOISE FIGURE: 1.5 dB at 500 MHz HIGH POWER GAIN: 12 dB at 2 GHz LARGE DYNAMIC RANGE: 19 dBm at 1 dB,2 GHz Gain CompressionDESCRIPTION00 (CHIP) 07/07BNEC's NE021 series of NPN silicon transistors provides eco-nomical solutions to wide ranges of amplifier a
2sc2148 2sc2149.pdf
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2sc2149.pdf
2SC2149NPN SILICON RF TRANSISTOR DESCRIPTION: The ASI 2SC2149 is Designed for PACKAGE STYLE .085 4LPILL Oscillator and Amplifier Applications up to 2.0 GHz.FEATURES INCLUDE: High insertion gain. High power gain. Low Noise figure MAXIMUM RATINGS IC 70 mA VCBO 25 V VCEO 12 V VEBO 3.0 V PDISS 3.3 W @ TA = 25 C TJ -65 C to +200 C TSTG -65 C to +2
2sc2140.pdf
isc Silicon NPN Power Transistor 2SC2140DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 350V (Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applications.High speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)a
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .