All Transistors. 2SC2145 Datasheet

 

2SC2145 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC2145
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 35 V
   Maximum Collector-Emitter Voltage |Vce|: 18 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 250 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO39

 2SC2145 Transistor Equivalent Substitute - Cross-Reference Search

   

2SC2145 Datasheet (PDF)

 8.1. Size:171K  nec
2sc2351 2sc2149 2sc4092 ne02133 ne02135 ne02139.pdf

2SC2145
2SC2145

NEC's NPN SILICON HIGH NE021FREQUENCY TRANSISTOR SERIESFEATURES HIGH INSERTION GAIN: 18.5 dB at 500 MHz LOW NOISE FIGURE: 1.5 dB at 500 MHz HIGH POWER GAIN: 12 dB at 2 GHz LARGE DYNAMIC RANGE: 19 dBm at 1 dB,2 GHz Gain CompressionDESCRIPTION00 (CHIP) 07/07BNEC's NE021 series of NPN silicon transistors provides eco-nomical solutions to wide ranges of amplifier a

 8.2. Size:52K  nec
2sc2148 2sc2149.pdf

2SC2145
2SC2145

DATA SHEETSILICON TRANSISTORS2SC2148, 2SC2149MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORDESCRIPTIONThe 2SC2148, 2SC2149 are economical microwave transistorsPACKAGE DIMENSIONS (Unit : mm)encapsulated into new hermetic stripline packages, "micro X".These are designed for small signal amplifier, low noise amplifier,1and oscillator applications in the L to

 8.3. Size:39K  nec
2sc4185 2sc2148 ne73430 ne73435.pdf

2SC2145
2SC2145

NPN SILICON GENERAL NE734PURPOSE TRANSISTOR SERIESFEATURES LOW NOISE FIGURE:

 8.4. Size:37K  advanced-semi
2sc2149.pdf

2SC2145

2SC2149NPN SILICON RF TRANSISTOR DESCRIPTION: The ASI 2SC2149 is Designed for PACKAGE STYLE .085 4LPILL Oscillator and Amplifier Applications up to 2.0 GHz.FEATURES INCLUDE: High insertion gain. High power gain. Low Noise figure MAXIMUM RATINGS IC 70 mA VCBO 25 V VCEO 12 V VEBO 3.0 V PDISS 3.3 W @ TA = 25 C TJ -65 C to +200 C TSTG -65 C to +2

 8.5. Size:209K  inchange semiconductor
2sc2140.pdf

2SC2145
2SC2145

isc Silicon NPN Power Transistor 2SC2140DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 350V (Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applications.High speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)a

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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