2SC216 Datasheet. Specs and Replacement

Type Designator: 2SC216  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.65 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.3 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO5

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2SC216 datasheet

 0.1. Size:73K  sanyo

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2SC216

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2SC216

Product Specification Silicon NPN Power Transistor 2SC2166 DESCRIPTION High Power Gain- Gpe 13.8dB @f= 27MHz, PO= 6W; VCC= 12V High Reliability APPLICATIONS Designed for 3 to 4 watts output power amplifiers in HF band mobile radio applications. ABSOLUTE MAXIMUM RATINGS (Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 45 V VCER Collector-Emit... See More ⇒

 0.3. Size:230K  inchange semiconductor

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2SC216

isc Silicon NPN Power Transistor 2SC2167 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO DC Current Gain- h = 60(Min)@ (V = 10V, I = 0.7A) FE CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV vertical output ,audio output driver and general purpose applications. ABSOLUTE MAXIMUM RA... See More ⇒

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Detailed specifications: 2SC2148, 2SC2149, 2SC215, 2SC2150, 2SC2151, 2SC2152, 2SC2153, 2SC2159, BC557, 2SC2160, 2SC2161, 2SC2162, 2SC2163, 2SC2164, 2SC2165, 2SC2166, 2SC2167

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