2SC2166 Datasheet and Replacement
Type Designator: 2SC2166
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 12 W
Maximum Collector-Base Voltage |Vcb|: 75 V
Maximum Collector-Emitter Voltage |Vce|: 75 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 27 MHz
Forward Current Transfer Ratio (hFE), MIN: 35
Noise Figure, dB: -
Package: TO220
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2SC2166 Datasheet (PDF)
2sc2166.pdf

Product Specification Silicon NPN Power Transistor 2SC2166 DESCRIPTION High Power Gain- : Gpe 13.8dB @f= 27MHz, PO= 6W; VCC= 12V High Reliability APPLICATIONS Designed for 3 to 4 watts output power amplifiers in HF band mobile radio applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 45 V VCER Collector-Emit
2sc2166.pdf

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2166DESCRIPTIONHigh Power Gain-: G 13.8dB @f= 27MHz, P = 6W; V = 12Vpe O CCHigh ReliabilityMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for 3 to 4 watts output power amplifiers in HF bandmobile radio applications.ABSOLUTE MAXIMUM RATINGS (T =25
2sc2167.pdf

isc Silicon NPN Power Transistor 2SC2167DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min)(BR)CEODC Current Gain-: h = 60(Min)@ (V = 10V, I = 0.7A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV vertical output ,audio output driver andgeneral purpose applications.ABSOLUTE MAXIMUM RA
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: FJPF13009 | 2N5496 | 2SD331C | 2SD468C | NSD134 | WBN13003B | 2N6045
Keywords - 2SC2166 transistor datasheet
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History: FJPF13009 | 2N5496 | 2SD331C | 2SD468C | NSD134 | WBN13003B | 2N6045



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