2N18 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N18
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 100 °C
Transition Frequency (ft): 2 MHz
Collector Capacitance (Cc): 40 pF
Forward Current Transfer Ratio (hFE), MIN: 18
Noise Figure, dB: -
Package: TO30
2N18 Transistor Equivalent Substitute - Cross-Reference Search
2N18 Datasheet (PDF)
2n1893 cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1112N1893NPN medium power transistor1997 Apr 17Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN medium power transistor 2N1893FEATURES PINNING Low current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 80 V).1 emitt
2n1893.pdf
2N1893SMALL SIGNAL NPN TRANSISTOR GENERAL PURPOSE HIGH VOLTAGEDEVICEDESCRIPTION The 2N1893 is a Silicon Planar Epitaxial NPNtransistor in Jedec TO-39 metal case, designedfor use in high-performance amplifier, oscillatorand switching circuits. It provides greater voltageswings in oscillator and amplifier circuits andmore protection in inductive switching circuits dueto
2n1613 2n1711 2n1893.pdf
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
2n1893x.pdf
2N1893XDimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 80V dia.IC = 0.6A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1
rt2n18m.pdf
RT2N18M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N18M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=1k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circuit
2n1893.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR TRANSISTORS 2N 1893TO-39Metal Can PackageGeneral Purpose Transistors.ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITSVCEOCollector Emitter Voltage 80 VVCERCollector Emitter Voltage 100 VVCBOCollector Base Voltage 120 V
2n1893 2n720a.pdf
TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/182 Devices Qualified Level JAN 2N1893 2N720A JANTX 2N1893S JANTXV MAXIMUM RATINGS Ratings Symbol All Devices Units Collector-Emitter Voltage 80 Vdc VCEO Collector-Base Voltage 120 Vdc VCBO 7.0 Vdc Emitter-Base Voltage VEBO 100 Vdc TO-18 (TO-206AA)* Collector-Emitter Voltage (R = 10
12n18.pdf
isc N-Channel MOSFET Transistor 12N18FEATURESDrain Current I = 12A@ T =25D CDrain Source Voltage-: V = 180V(Min)DSSStatic Drain-Source On-Resistance: R = 0.25(Max)DS(on)Fast SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitch mode power supply.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB
Datasheet: 2N1784 , 2N1785 , 2N1786 , 2N1787 , 2N1788 , 2N1789 , 2N179 , 2N1790 , 2SC2482 , 2N180 , 2N1808 , 2N1809 , 2N181 , 2N1810 , 2N1811 , 2N1812 , 2N1813 .
