2N18. Аналоги и основные параметры
Наименование производителя: 2N18
Тип материала: Ge
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 25 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
Макcимальный постоянный ток коллектора (Ic): 0.2 A
Предельная температура PN-перехода (Tj): 100 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 2 MHz
Ёмкость коллекторного перехода (Cc): 40 pf
Статический коэффициент передачи тока (hFE): 18
Корпус транзистора: TO30
Аналоги (замена) для 2N18
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подбор ⓘ биполярного транзистора по параметрам
2N18 даташит
0.10. Size:51K philips
2n1893 cnv 2.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N1893 NPN medium power transistor 1997 Apr 17 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN medium power transistor 2N1893 FEATURES PINNING Low current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 80 V). 1 emitt
0.11. Size:311K st
2n1893.pdf 

2N1893 SMALL SIGNAL NPN TRANSISTOR GENERAL PURPOSE HIGH VOLTAGE DEVICE DESCRIPTION The 2N1893 is a Silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed for use in high-performance amplifier, oscillator and switching circuits. It provides greater voltage swings in oscillator and amplifier circuits and more protection in inductive switching circuits due to
0.17. Size:64K central
2n1613 2n1711 2n1893.pdf 

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824
0.18. Size:10K semelab
2n1893x.pdf 

2N1893X Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 80V dia. IC = 0.6A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1
0.19. Size:164K isahaya
rt2n18m.pdf 

RT2N18M Composite Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING Unit mm DESCRIPTION 2.1 RT2N18M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=1k ) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circuit
0.20. Size:223K cdil
2n1893.pdf 

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTORS 2N 1893 TO-39 Metal Can Package General Purpose Transistors. ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 80 V VCER Collector Emitter Voltage 100 V VCBO Collector Base Voltage 120 V
0.23. Size:261K inchange semiconductor
12n18.pdf 

isc N-Channel MOSFET Transistor 12N18 FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage- V = 180V(Min) DSS Static Drain-Source On-Resistance R = 0.25 (Max) DS(on) Fast Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switch mode power supply. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB
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