2SC2239 Datasheet and Replacement

isc Silicon NPN Power Transistor 2SC2239DESCRIPTIONCollector-Emitter Breakdown Voltage: V =160V(Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsDriver stage amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector

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UNISONIC TECHNOLOGIES CO., LTD 2SC2235 NPN SILICON TRANSISTOR AUDIO POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS 1TO-92 FEATURES * Complimentary to UTC 2SA965 1TO-92NL ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC2235L-x-T92-B 2SC2235G-x-T92-B TO-92 E C B Tape Box 2SC2235L-x-T92-K 2S

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2SC2235TM 0.8A , 120V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92MODFEATURES Complementary to 2SA965 A DBCLASSIFICATION OF hFE Product-Rank 2SC2235TM-O 2SC2235TM-YKE FRange 80-160 120-240CNG HEmitter Collector Base MJLCollector

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate TransistorsTO-92L 2SC2236 TRANSISTOR (NPN)1. EMITTER FEATURE2. COLLECTOR Complementary to 2SA966 and 3 Watts Output Applications. 3. BASE Equivalent Circuit C2236=Device code C2236Solid dot = Green molding compound device, if none, the normal device XXX=Code ORDERING INFOR

JMnic Product Specification Silicon NPN Power Transistors 2SC2238 2SC2238A 2SC2238B DESCRIPTION With TO-220 package Complement to type 2SA968 High breakdown votage APPLICATIONS Power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=25)

2SC2235 TO-92L Transistor (NPN)TO-92L1. EMITTER 2. COLLECTER 3. BASE 4.7005.100 2 3 1Features 7.800Complementary to 2SA965 B B8.200MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.6000.800Symbol Parameter Value UnitsB0.350VCBOB Collector-Base Voltage 120 V B0.55013.800VCEOB Collector-Emitter Voltage 120 V B14.200VEBOB Emitter-Base Volt

2SC2236 TO-92L Transistor (NPN)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 4.700 2 3 5.1001Features7.8008.200 Complementary to 2SA966 and 3 Watts output Applications. 0.6000.800MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units0.3500.550VCBO Collector-Base Voltage 30 V 13.80014.200VCEO Collector-Emitter Voltage 30 V VEBO Emitt

2SC2236 TO-92MOD Transistor (NPN)TO-92MOD1. EMITTER 1 22. COLLECTOR 3 3. BASE Features5.8006.200 Complementary to 2SA966 and 3 Watts output Applications. 8.4008.800MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.9001.1000.400Symbol Parameter Value Units0.600VCBO Collector-Base Voltage 30 V13.80014.200VCEO Collector-Emitter Voltage 30 V

2SC2230/2SC2230A TO-92MOD Transistor (NPN)1. EMITTER TO-92MOD12. COLLECTOR 2 3 3. BASE Features5.8006.200 High voltage: VCEO=180V(2SC2230A) 8.400 High DC Current Gain 8.8000.9001.1000.4000.60013.80014.200MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units1.500 TYP2.900Dimensions in inches and (millimeters)VCBO

2SC2235 TO-92MOD Transistor (NPN)TO-92MOD1 1. EMITTER 22. COLLECTER 3 3. BASE Features Complementary to 2SA965 5.8006.200MAXIMUM RATINGS (TB B=25 unless otherwise noted) A8.4008.800Symbol Parameter Value Units0.9001.100VB B Collector-Base Voltage 120 V CBO0.4000.600VB B Collector-Emitter Voltage 120 V CEOVB B Emitter-Base Voltage 5 V 13

2SC2235 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92LM NPN Silicon NPN transistor in a TO-92LM Plastic Package. / Features 2SA965 Complementary to 2SA965. / Applications ,Audio frequency amplifier and driver stage amplifier Applications. / Equivale

isc Silicon NPN Power Transistor 2SC2238DESCRIPTIONCollector-Emitter Breakdown Voltage: V =160V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA968Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsDriver stage amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2233 DESCRIPTION Collector-Emitter Breakdown Voltage- :VCEO= 60V(Min) DC Current Gain- : hFE= 30(Min)@ (VCE= 5V, IC= 1A) High Collector Current High Collector Power Dissipation APPLICATIONS TV Horizontal Deflection Output Application ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL P

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2238BDESCRIPTIONCollector-Emitter Breakdown Voltage: V =200V(BR)CEOGood Linearity of hFEComplement to Type 2SA968BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsDriver stage amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =2

isc Silicon NPN Power Transistor 2SC2238 A BDESCRIPTIONWith TO-220 packagingComplement to Type 2SA968 A BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAC-DC motor controlElectronic ignitionAlternator regulatorABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT2SC2238 160V Collector-Base Voltage 2SC