2SC2242 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC2242
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 25 MHz
Collector Capacitance (Cc): 3.5 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO220
2SC2242 Transistor Equivalent Substitute - Cross-Reference Search
2SC2242 Datasheet (PDF)
2sc2242.pdf
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2sc2242.pdf
isc Silicon NPN Power Transistor 2SC2242DESCRIPTIONHigh Breakdown Voltage-: V = 300V(Min)(BR)CBOHigh Current-GainBandwidth Product-: f = 20MHz(Min)@I = 20mAT CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsColor TV sound output applicationsRecommended for sound output stage in line
2sc2240.pdf
2SC2240 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2240 Low Noise Audio Amplifier Applications Unit: mm The 2SC2240 is a transistor for low frequency and low noise applications. This device is designed to lower noise figure in the region of low signal source impedance, and to lower the pulse noise. This is recommended for the first stages of Equalizer amplif
2sc2246.pdf
Product Specification www.jmnic.com Silicon Power Transistors 2SC2246 DESCRIPTION High voltage ,high speed With TO-3 package APPLICATIONS Power switching Power amplification power driver PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS
2sc2240.pdf
NPN NPN Epitaxial Silicon Transistor R2SC2240(NPN) APPLICATIONS Low noise audio amplifier applications FEATURES V =120V (min) High collector voltageV =120V (min) CEO CEO 2SA970 Complementary 2SA970 High DC current gain
2sc2240.pdf
2SC2240 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features ,,Low noise, high DC current gain, high breakdown voltage / Applications Low noise audio amplifier applications.
2sc2246t3bl.pdf
2SC2246T3BLSilicon NPN Power TransistorDESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V (Min)CEO(SUS)High Switching SpeedAPPLICATIONSPower switchingPower amplificationPower driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITVV Collector-Base Voltage 450CBOV Collector-Emitter Voltage 400 VCEOV Emitter-Base Voltage 5 V
2sc2246.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC2246DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 600V (Min)CEO(SUS)High Switching SpeedAPPLICATIONSPower switchingPower amplificationPower driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITVV Collector-Base Voltage 1000CBOV Collector-Emitter Voltage 600 V
2sc2246.pdf
2SC2246High Voltage Switching Power Transistor25A,800V QUICK REFERENCEPart Number Industry Part IC VCBO VCEO PDPackage Packing MarkingTO-32SC2246 2SC2246 25A 800V 600V 200W50PcsplywoodSilicon NPN Transistors NPN50
2sc2248.pdf
isc Silicon NPN Power Transistor 2SC2248DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower switchingPower amplificationPower driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Collector-Base Vo
2sc2247.pdf
isc Silicon NPN Power Transistor 2SC2247DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower switchingPower amplificationPower driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Collector-Base Vo
2sc2244.pdf
isc Silicon NPN Power Transistor 2SC2244DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower switchingPower amplificationPower driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Collector-Base Vo
2sc2246.pdf
isc Silicon NPN Power Transistor 2SC2246DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower switchingPower amplificationPower driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Collector-Base Vo
2sc2243.pdf
isc Silicon NPN Power Transistor 2SC2243DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower switchingPower amplificationPower driverABSOLUTE MAXIMUM RATINGS(T =25)aUNITSYMBOL PARAMETER MAXV Collector-Base V
2sc2245.pdf
isc Silicon NPN Power Transistor 2SC2245DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower switchingPower amplificationPower driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Collector-Base Vo
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
