2SC2242 Datasheet PDF and Equivalents Search

 ..1. Size:112K  toshiba

 2sc2242.pdf

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer ... See More ⇒

 ..2. Size:191K  inchange semiconductor

 2sc2242.pdf

isc Silicon NPN Power Transistor 2SC2242 DESCRIPTION High Breakdown Voltage- V = 300V(Min) (BR)CBO High Current-Gain Bandwidth Product- f = 20MHz(Min)@I = 20mA T C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Color TV sound output applications Recommended for sound output stage in line... See More ⇒

 8.1. Size:347K  toshiba

 2sc2240.pdf

2SC2240 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2240 Low Noise Audio Amplifier Applications Unit mm The 2SC2240 is a transistor for low frequency and low noise applications. This device is designed to lower noise figure in the region of low signal source impedance, and to lower the pulse noise. This is recommended for the first stages of Equalizer amplif... See More ⇒

 8.2. Size:121K  jmnic

 2sc2246.pdf

Product Specification www.jmnic.com Silicon Power Transistors 2SC2246 DESCRIPTION High voltage ,high speed With TO-3 package APPLICATIONS Power switching Power amplification power driver PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS ... See More ⇒

 8.3. Size:545K  jilin sino

 2sc2240.pdf

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 8.4. Size:747K  blue-rocket-elect

 2sc2240.pdf

2SC2240 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features , , Low noise, high DC current gain, high breakdown voltage / Applications Low noise audio amplifier applications. ... See More ⇒

 8.5. Size:1288K  cn sps

 2sc2246t3bl.pdf

2SC2246T3BL Silicon NPN Power Transistor DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V (Min) CEO(SUS) High Switching Speed APPLICATIONS Power switching Power amplification Power driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V V Collector-Base Voltage 450 CBO V Collector-Emitter Voltage 400 V CEO V Emitter-Base Voltage 5 V ... See More ⇒

 8.6. Size:181K  cn sptech

 2sc2246.pdf

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC2246 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 600V (Min) CEO(SUS) High Switching Speed APPLICATIONS Power switching Power amplification Power driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V V Collector-Base Voltage 1000 CBO V Collector-Emitter Voltage 600 V ... See More ⇒

 8.7. Size:383K  cn haohai electr

 2sc2246.pdf

2SC2246 High Voltage Switching Power Transistor 25A,800V QUICK REFERENCE Part Number Industry Part IC VCBO VCEO PD Package Packing Marking TO-3 2SC2246 2SC2246 25A 800V 600V 200W 50Pcs plywood Silicon NPN Transistors NPN 50 ... See More ⇒

 8.8. Size:209K  inchange semiconductor

 2sc2248.pdf

isc Silicon NPN Power Transistor 2SC2248 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching Power amplification Power driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Collector-Base Vo... See More ⇒

 8.9. Size:208K  inchange semiconductor

 2sc2247.pdf

isc Silicon NPN Power Transistor 2SC2247 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching Power amplification Power driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Collector-Base Vo... See More ⇒

 8.10. Size:208K  inchange semiconductor

 2sc2244.pdf

isc Silicon NPN Power Transistor 2SC2244 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching Power amplification Power driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Collector-Base Vo... See More ⇒

 8.11. Size:187K  inchange semiconductor

 2sc2246.pdf

isc Silicon NPN Power Transistor 2SC2246 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching Power amplification Power driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Collector-Base Vo... See More ⇒

 8.12. Size:207K  inchange semiconductor

 2sc2243.pdf

isc Silicon NPN Power Transistor 2SC2243 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching Power amplification Power driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a UNIT SYMBOL PARAMETER MAX V Collector-Base V... See More ⇒

 8.13. Size:208K  inchange semiconductor

 2sc2245.pdf

isc Silicon NPN Power Transistor 2SC2245 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching Power amplification Power driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Collector-Base Vo... See More ⇒