All Transistors. 2SC2259 Datasheet

 

2SC2259 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC2259
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 50 MHz
   Collector Capacitance (Cc): 1.8 pF
   Forward Current Transfer Ratio (hFE), MIN: 250
   Noise Figure, dB: -
   Package: SOT89

 2SC2259 Transistor Equivalent Substitute - Cross-Reference Search

   

2SC2259 Datasheet (PDF)

 8.1. Size:71K  panasonic
2sc2258.pdf

2SC2259
2SC2259

Power Transistors2SC2258Silicon NPN triple diffusion planar typeFor high breakdown voltage general amplificationUnit: mm8.0+0.50.13.20.2 3.160.1 Features High collector-emitter voltage (Base open) VCEO High transition frequency fT TO-126B package which requires no insulation plate for installa-tion to the heat sink Absolute Maximum Ratings Ta

 8.2. Size:166K  jmnic
2sc2258.pdf

2SC2259
2SC2259

JMnic Product Specification Silicon NPN Power Transistors 2SC2258 DESCRIPTION With TO-126 package High transition frequency fT High collector-emitter voltage VCEO APPLICATIONS For high breakdown voltage general amplification For video output amplification PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum

 8.3. Size:146K  jmnic
2sc2258a.pdf

2SC2259
2SC2259

JMnic Product Specification Silicon NPN Power Transistors 2SC2258A DESCRIPTION With TO-126 package High transition frequency fT High collector-emitter voltage VCEO APPLICATIONS High voltage general amplifier TV video output amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMB

 8.4. Size:189K  inchange semiconductor
2sc2258.pdf

2SC2259
2SC2259

isc Silicon NPN Power Transistor 2SC2258DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 250V(Min)(BR)CEOHigh Current-Gain Bandwidth ProductMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor high breakdown voltage general amplificationFor video output amplificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

 8.5. Size:116K  inchange semiconductor
2sc2258a.pdf

2SC2259
2SC2259

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2258A DESCRIPTION With TO-126 package High transition frequency fT High collector-emitter voltage VCEO APPLICATIONS High voltage general amplifier TV video output amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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