All Transistors. 2SC2276 Datasheet

 

2SC2276 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC2276
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 80 W
   Maximum Collector-Base Voltage |Vcb|: 130 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 7 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 50 MHz
   Collector Capacitance (Cc): 150 pF
   Forward Current Transfer Ratio (hFE), MIN: 150
   Noise Figure, dB: -
   Package: MT-200

 2SC2276 Transistor Equivalent Substitute - Cross-Reference Search

   

2SC2276 Datasheet (PDF)

 8.1. Size:94K  toshiba
2sc2270.pdf

2SC2276
2SC2276

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 8.2. Size:38K  hitachi
2sc2278.pdf

2SC2276

 8.3. Size:88K  no
2sc2275.pdf

2SC2276

 8.4. Size:32K  no
2sc2277.pdf

2SC2276

 8.5. Size:78K  secos
2sc2274.pdf

2SC2276

2SC2274 0.5 A , 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 High Breakdown Voltage G H High Current Low Saturation Voltage EmitterJCollectorBase A DBCLASSIFICATION OF hFE(1) Millimeter REF.Min. Max.KProduct-Rank 2SC2274-D

 8.6. Size:156K  jmnic
2sc2275.pdf

2SC2276
2SC2276

JMnic Product Specification Silicon NPN Power Transistors 2SC2275 2SC2275A DESCRIPTION With TO-220 package Complement to type 2SA985/985A High breakdown voltage APPLICATIONS For low frequency and high frequency power amplifer applicatons PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=25) SYM

 8.7. Size:175K  foshan
2sc2275-a 3da2275-a.pdf

2SC2276
2SC2276

2SC2275(3DA2275) 2SC2275A(3DA2275A) NPN /SILICON NPN TRANSISTOR : Purpose: Power amplifier applications. :, 2SA985(3CA985)/2SA985A(3CA985A) Features: Wide Safe Operating Area, complementary to 2SA985(3CA985)/2SA985A(3CA985A). /Absolute Maximum Ratings(Ta=25)

 8.8. Size:198K  inchange semiconductor
2sc2275.pdf

2SC2276
2SC2276

isc Silicon NPN Power Transistor 2SC2275DESCRIPTIONCollector-Emitter Breakdown Voltage: V = 120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA985Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier applicationsHigh frequency power amplifier applicationsABSOLUTE MAXIMUM RATINGS(

 8.9. Size:125K  inchange semiconductor
2sc2275 2sc2275a.pdf

2SC2276
2SC2276

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2275 2SC2275A DESCRIPTION With TO-220 package Complement to type 2SA985/985A High breakdown voltage APPLICATIONS For low frequency and high frequency power amplifer applicatons PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum rating

 8.10. Size:216K  inchange semiconductor
2sc2270.pdf

2SC2276
2SC2276

isc Silicon NPN Power Transistor 2SC2270DESCRIPTIONHigh Collector Power DissipationP =10W(Tc=25), P =1.0W(Ta=25)C CHigh DC Current Gain: h =140~450@V =2V,I =0.5AFE CE Ch =70(Min)@V =2V,I =4AFE CE CLow Collector Saturation VoltageV =1.0V(Max)@I =4A,I 0.1ACE(sat) C B=Minimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLIC

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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