2SC2310O Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC2310O
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 3.5 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO92
2SC2310O Transistor Equivalent Substitute - Cross-Reference Search
2SC2310O Datasheet (PDF)
2sc2310 2sc458.pdf
2SC458 (LG), 2SC2310Silicon NPN EpitaxialApplication Low frequency low noise amplifier Complementary pair with 2SA1031 and 2SA1032OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SC458 (LG), 2SC2310Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SC458 (LG) 2SC2310 UnitCollector to base voltage VCBO 30 55 VCollector to emitter voltage VCEO 30 50 VEmit
2sc2316.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2316DESCRIPTIONCollector-Emitter Breakdown Voltage-:V = 80(V)(Min.)(BR)CEO100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSeries regulator,switch and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI
2sc2314.pdf
isc Silicon NPN Power Transistor 2SC2314DESCRIPTIONCollector-Emitter Voltage-:V = 75V(Min) ;R =150CER BECollector Current-:I =1.5ACLow Saturation Voltage: V =0.6V(MAX)@ IC=0.5ACE(sat)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower Amplifier ApplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SD171-1
