2SC2316O Specs and Replacement

Type Designator: 2SC2316O

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.9 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 120 MHz

Collector Capacitance (Cc): 30 pF

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: TO92

 2SC2316O Substitution

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2SC2316O datasheet

 7.1. Size:72K  sanken-ele

2sc2315 2sc2316.pdf pdf_icon

2SC2316O

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 7.2. Size:184K  inchange semiconductor

2sc2316.pdf pdf_icon

2SC2316O

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2316 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80(V)(Min.) (BR)CEO 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Series regulator,switch and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI... See More ⇒

 8.1. Size:85K  sanyo

2sc2314.pdf pdf_icon

2SC2316O

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 8.2. Size:41K  hitachi

2sc2310 2sc458.pdf pdf_icon

2SC2316O

2SC458 (LG), 2SC2310 Silicon NPN Epitaxial Application Low frequency low noise amplifier Complementary pair with 2SA1031 and 2SA1032 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC458 (LG), 2SC2310 Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SC458 (LG) 2SC2310 Unit Collector to base voltage VCBO 30 55 V Collector to emitter voltage VCEO 30 50 V Emit... See More ⇒

Detailed specifications: 2SC2312, 2SC2313, 2SC2314, 2SC2314D, 2SC2314E, 2SC2314F, 2SC2315, 2SC2316, TIP35C, 2SC2316Y, 2SC2317, 2SC2318, 2SC2319, 2SC232, 2SC2320, 2SC2320L, 2SC2321

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