2SC2359 Datasheet. Specs and Replacement

Type Designator: 2SC2359  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 450 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO3

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2SC2359 datasheet

 8.1. Size:171K  nec

2sc2351 2sc2149 2sc4092 ne02133 ne02135 ne02139.pdf pdf_icon

2SC2359

NEC's NPN SILICON HIGH NE021 FREQUENCY TRANSISTOR SERIES FEATURES HIGH INSERTION GAIN 18.5 dB at 500 MHz LOW NOISE FIGURE 1.5 dB at 500 MHz HIGH POWER GAIN 12 dB at 2 GHz LARGE DYNAMIC RANGE 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION 00 (CHIP) 07/07B NEC's NE021 series of NPN silicon transistors provides eco- nomical solutions to wide ranges of amplifier a... See More ⇒

 8.2. Size:36K  nec

2sc2352.pdf pdf_icon

2SC2359

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 8.3. Size:37K  nec

2sc2353.pdf pdf_icon

2SC2359

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 8.4. Size:30K  nec

2sc2351.pdf pdf_icon

2SC2359

DATA SHEET SILICON TRANSISTOR 2SC2351 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES NF 1.5 dB TYP. @ f = 1.0 GHz PACKAGE DIMENSIONS (Units mm) MAG 14 dB TYP. @ f = 1.0 GHz 2.8 0.2 +0.1 1.5 0.65-0.15 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base Voltage VCBO 25 V 2 Collector to Emitter Voltage VCEO 12 V Emitter to B... See More ⇒

Detailed specifications: 2SC2350, 2SC2351, 2SC2352, 2SC2353, 2SC2354, 2SC2356, 2SC2357, 2SC2358, BC337, 2SC236, 2SC2360, 2SC2361, 2SC2361A, 2SC2362, 2SC2362K, 2SC2363, 2SC2364

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