2SC2361A Datasheet. Specs and Replacement
Type Designator: 2SC2361A 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 70 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO220
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2SC2361A datasheet
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2361 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 70(V)(Min.) (BR)CEO 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Series regulator,switch and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI... See More ⇒
Ordering number ENN572E PNP/NPN Epitaxial Planar Silicon Transistors 2SA1016, 1016K/2SC2362, 2362K High-Voltage Low-Noise Amp Applications Package Dimensions unit mm 2003B [2SA1016, 1016K/2SC2362, 2362K] 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 2 3 1 Emitter ( ) 2SA1016, 1016K 2 Collecor 3 Base Specifications 1.3 1.3 SANYO NP Absolute Maximum Ratings at Ta = 25 C 2SA101... See More ⇒
Detailed specifications: 2SC2354, 2SC2356, 2SC2357, 2SC2358, 2SC2359, 2SC236, 2SC2360, 2SC2361, A1015, 2SC2362, 2SC2362K, 2SC2363, 2SC2364, 2SC2365, 2SC2366, 2SC2367, 2SC2368
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