2SC2363 Datasheet. Specs and Replacement

Type Designator: 2SC2363  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 130 MHz

Collector Capacitance (Cc): 1.8 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO92

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2SC2363 datasheet

 8.1. Size:55K  sanyo

2sa1016 2sc2362 2sc2362k.pdf pdf_icon

2SC2363

Ordering number ENN572E PNP/NPN Epitaxial Planar Silicon Transistors 2SA1016, 1016K/2SC2362, 2362K High-Voltage Low-Noise Amp Applications Package Dimensions unit mm 2003B [2SA1016, 1016K/2SC2362, 2362K] 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 2 3 1 Emitter ( ) 2SA1016, 1016K 2 Collecor 3 Base Specifications 1.3 1.3 SANYO NP Absolute Maximum Ratings at Ta = 25 C 2SA101... See More ⇒

 8.2. Size:32K  nec

2sc2368.pdf pdf_icon

2SC2363

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 8.3. Size:32K  nec

2sc2369.pdf pdf_icon

2SC2363

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 8.4. Size:97K  advanced-semi

2sc2367.pdf pdf_icon

2SC2363

2SC2367 NPN SILICON HI FREQUNCY TRANSISTOR DESCRIPTION The ASI 2SC2367 is Designed for general purpose and small signal PACKAGE STYLE .100 4L PILL amplifier and oscillator applications up to 6.0 GHz. FEATURES INCLUDE High frequency 8.0 GH Low noise, 1 dB at 0.5 GHz. MAXIMUM RATINGS IC 80 mA VCBO 20 V VCEO 10 V VEBO 1.5 V PDISS 580 mW @ TA = 25 C TJ ... See More ⇒

Detailed specifications: 2SC2358, 2SC2359, 2SC236, 2SC2360, 2SC2361, 2SC2361A, 2SC2362, 2SC2362K, TIP3055, 2SC2364, 2SC2365, 2SC2366, 2SC2367, 2SC2368, 2SC2369, 2SC237, 2SC2370

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