2SC2390 Datasheet. Specs and Replacement
Type Designator: 2SC2390 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 70 MHz
Collector Capacitance (Cc): 2.5 pF
Forward Current Transfer Ratio (hFE), MIN: 180
Package: TO92
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2SC2390 datasheet
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Product Specification www.jmnic.com Silicon NPN Power Transistor 2SC2334 DESCRIPTION Low Collector Saturation Voltage Fast Switching Speed Complement to Type 2SA1010 APPLICATIONS Developed for high-voltage high-speed switching, and is ideal for use as a driver in devices such as switching reg- lators, DC/DC converters, and high frequency power am- plifiers. ABSO... See More ⇒
JMnic Product Specification Silicon NPN Power Transistors 2SC2373 DESCRIPTION With TO-220 package Low collector saturation voltage Fast switching time APPLICATIONS For use in horizontal deflection output for B/W TV applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAME... See More ⇒
JMnic Product Specification Silicon NPN Power Transistors 2SC2335 DESCRIPTION With TO-220C package Collector-emitter sustaining voltage VCEO(sus)=400V(Min) Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A Switching time-tf=1.0 s(Max.)@IC=3.0A APPLICATIONS Designed for use in high-voltage ,high- speed ,power switching in inductive cir... See More ⇒
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC2365 DESCRIPTION With TO-3 package High breakdown voltage APPLICATIONS For use in switch-mode CTV supply systems PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCB... See More ⇒
Product Specification www.jmnic.com Silicon Power Transistors 2SC2331 DESCRIPTION With TO-220 package Complement to type 2SA1008 Low collector saturation voltage Fast switching speed APPLICATIONS Switching regulators DC/DC converters High frequency power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig... See More ⇒
JMnic Product Specification Silicon NPN Power Transistors 2SC2333 DESCRIPTION With TO-220C package High speed switching Low collector saturation voltage APPLICATIONS Switching regulator DC-DC converter Ultrasonic appliance PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARA... See More ⇒
JMnic Product Specification Silicon NPN Power Transistors 2SC2336 2SC2336A 2SC2336B DESCRIPTION With TO-220 package Complement to type 2SA1006, 2SA1006A,2SA1006B APPLICATIONS Audio frequency power amplifier High frequency power amplifier PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Emi... See More ⇒
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC2305 DESCRIPTION With TO-3PN package High breakdown voltage Fast switching speed Wide safe operating area APPLICATIONS For switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol ... See More ⇒
JMnic Product Specification Silicon NPN Power Transistors 2SC2344 DESCRIPTION With TO-220 package Complement to type 2SA1011 APPLICATIONS High voltage switching Audio frequency power amplifier; 100W output predriver applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Emitter Ab... See More ⇒
JMnic Product Specification Silicon NPN Power Transistors 2SC2371 DESCRIPTION With TO-126 package High Voltage High frequency APPLICATIONS For TV chroma output and vertical output applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter... See More ⇒
2SC2383 TO-92L Transistor (NPN) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 4.700 2 3 5.100 1 Features 7.800 8.200 High voltage VCEO=160V 0.600 0.800 Large continuous collector current capability Complementary to 2SA1013 0.350 0.550 13.800 14.200 1.270 TYP Dimensions in inches and (millimeters) 2.440 MAXIMUM RATINGS (TA=25 unless otherwise noted) 2.640 0.... See More ⇒
2SC2383 TO-92MOD Transistor (NPN) TO-92MOD 1. EMITTER 1 2. COLLECTOR 2 3 3. BASE 5.800 Features 6.200 High voltage VCEO=160V 8.400 8.800 Large continuous collector current capability 0.900 Complementary to 2SA1013 1.100 0.400 0.600 13.800 14.200 1.500 TYP 2.900 Dimensions in inches and (millimeters) 3.100 MAXIMUM RATINGS (TA=25 unless otherwis... See More ⇒
SMD Type Transistors NPN Transistors 2SC2351 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=70mA Collector Emitter Voltage VCEO=12V 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collecto... See More ⇒
SMD Type Transistors NPN Transistors 2SC2383 1.70 0.1 Features High voltage VCEO=160V Large continuous collector current capability 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 160 Collector - Emitter Voltage VCEO 160 V Emitter - Base Voltage VEBO 6 Collector ... See More ⇒
2SC2344(3DA2344) NPN /SILICON NPN TRANSISTOR 100W Purpose High voltage switching, AF power amplifier, 100W output predriver applications. 2SA1011(3CA1011) Features complementary pair with 2SA1011(3CA1011). /Absolute maximum ratings(Ta=25 ) ... See More ⇒
2SC2383 NPN Transistors Features Excellent h characteristics FE 3 2 1.Base 1 2.Collector 3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25 Parameter Symbol Value Unit Collector Base Voltage VCBO 160 V Collector Emitter Voltage VCEO 160 V Emitter Base Voltage VEBO 6 V Collector Current IC 1 A Base Current IB 0.5 A Collector Power ... See More ⇒
2SC2383 SOT-89 NPN Transistors 3 Features 2 Small Flat Package 1.Base 1 General Purpose Application 2.Collector 3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25 Parameter Symbol Ratings Unit Collector-Base Voltage VCBO 160 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 6 V Collector Current-Continuous IC 1 ... See More ⇒
2sc2334m 2sc2334l 2sc2334k.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC2334 DESCRIPTION Low Collector Saturation Voltage Fast Switching Speed Complement to Type 2SA1010 APPLICATIONS Developed for high-voltage high-speed switching, and is ideal for use as a driver in devices such as switching reg- lators, DC/DC converters, and high frequency power am- plifiers. ABSOLUTE MAXIMUM R... See More ⇒
isc Silicon NPN Power Transistor 2SC2337 DESCRIPTION High Current Capability Collector-Emitter Breakdown Voltage- V = 130V(Min.) (BR)CEO Complement to Type 2SA1007 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE... See More ⇒
isc Silicon NPN Power Transistor 2SC2307 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Bas... See More ⇒
isc Silicon NPN Power Transistor 2SC2334 DESCRIPTION Low Collector Saturation Voltage Fast Switching Speed Complement to Type 2SA1010 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Developed for high-voltage high-speed switching, and is ideal for use as a driver in devices such as switching reg- lators, DC/DC converters, and h... See More ⇒
isc Silicon NPN Power Transistor 2SC2373 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.5V(Max)@ I = 5A, I = 0.5A CE(sat) C B Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection output for B/W... See More ⇒
isc Silicon NPN Power Transistor 2SC2335 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) Collector-Emitter Saturation Voltage- V = 1.0V(Max)@ I = 3A, I = 0.6A CE(sat) C B Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage, high-speed switching in ... See More ⇒
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2335F DESCRIPTION With TO-220F package Collector-emitter sustaining voltage VCEO(sus)=400V(Min) Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A Switching time-tf=1.0 s(Max.)@IC=3.0A APPLICATIONS Designed for use in high-voltage ,high- speed ,power switching ... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2316 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80(V)(Min.) (BR)CEO 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Series regulator,switch and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2358 DESCRIPTION With TO-3 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for color TV horizontal deflection driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1000 V CBO ... See More ⇒
isc Silicon NPN Power Transistor 2SC2314 DESCRIPTION Collector-Emitter Voltage- V = 75V(Min) ;R =150 CER BE Collector Current- I =1.5A C Low Saturation Voltage V =0.6V(MAX)@ IC=0.5A CE(sat) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power Amplifier Applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM... See More ⇒
isc Silicon NPN Power Transistor 2SC2365 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V (Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching Power amplification Power driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Collector-Base Voltage 6... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2361 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 70(V)(Min.) (BR)CEO 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Series regulator,switch and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI... See More ⇒
isc Silicon NPN Power Transistor 2SC2331 DESCRIPTION Low Collector Saturation Voltage- V = 0.6V(Max.)@ I = 1A CE(sat) C Fast Switching Speed Complement to Type 2SA1008 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as a driver in devices such as switching regulators, DC/DC converters, and high-frequency pow... See More ⇒
INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC2351 DESCRIPTION Low Noise NF = 1.5 dB TYP. ; @ f = 1 GHz High Maximum Available Gain MAG = 14 dB TYP. ; @ f = 1 GHz APPLICATIONS Designed for use as UHF oscillators and a UHF mixer in a tuner of a TV receiver. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Col... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2336 2SC2336A 2SC2336B DESCRIPTION With TO-220 package Complement to type 2SA1006, 2SA1006A,2SA1006B APPLICATIONS Audio frequency power amplifier High frequency power amplifier PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) ... See More ⇒
isc Silicon NPN Power Transistor 2SC2333 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) High Speed Switching Low Collector Saturation Voltage Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator, DC-DC converter and ultrasonic appliance appli... See More ⇒
isc Silicon NPN Power Transistor 2SC2336 DESCRIPTION Good Linearity of h FE High Collector-Emitter Breakdown Voltage- V = 180V(Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SA1006 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Adudio frequency power amplifier High frequency power amplifier ABSOLUTE MAX... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Pow Transistor 2SC2383 DESCRIPTION High breakdown voltage Low output capacitance Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV class B sound output applications Color TV vert.deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Col... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2305 DESCRIPTION With TO-3 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for color TV horizontal deflection driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 400 V CBO ... See More ⇒
isc Silicon NPN Power Transistor 2SC2344 DESCRIPTION Low Collector Saturation Voltage- V = 0.3V(Typ.)@ I = 0.5A CE(sat) C Collector-Emitter Breakdown Voltage- V = 160V(Min.) (BR)CEO Complement to Type 2SA1011 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage switching, audio frequency power amplif... See More ⇒
isc Silicon NPN Power Transistor 2SC2371 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for video applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 300 V CBO V C... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2304 DESCRIPTION With TO-3 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for color TV horizontal deflection driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 500 V CBO ... See More ⇒
Detailed specifications: 2SC2384, 2SC2385, 2SC2386, 2SC2387, 2SC2388, 2SC2388A, 2SC2389, 2SC239, 2SD2499, 2SC2391, 2SC2392, 2SC2393, 2SC2394, 2SC2395, 2SC2396, 2SC2397, 2SC2398
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