2SC2430
Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC2430
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100
W
Maximum Collector-Base Voltage |Vcb|: 120
V
Maximum Collector-Emitter Voltage |Vce|: 120
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 10
A
Max. Operating Junction Temperature (Tj): 175
°C
Transition Frequency (ft): 40
MHz
Collector Capacitance (Cc): 200
pF
Forward Current Transfer Ratio (hFE), MIN: 35
Noise Figure, dB: -
Package:
TO3
2SC2430
Transistor Equivalent Substitute - Cross-Reference Search
2SC2430
Datasheet (PDF)
8.1. Size:220K jmnic
2sc2438.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC2438 DESCRIPTION With TO-220C package Low collector saturation voltage High reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbso
8.2. Size:196K inchange semiconductor
2sc2438.pdf
isc Silicon NPN Power Transistor 2SC2438DESCRIPTIONLow Collector Saturation Voltage-:V = 0.5(V)(Max)@ I = 4ACE(sat) CHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE M
8.3. Size:188K inchange semiconductor
2sc2437.pdf
isc Silicon NPN Power Transistor 2SC2437DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsDC-DC convertorSolid state relayGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA
8.4. Size:213K inchange semiconductor
2sc2433.pdf
isc Silicon NPN Power Transistor 2SC2433DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = 120V(Min)(BR)CEOHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SA1043Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower switching applicationsHigh frequency power amplifierSwitching regula
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