All Transistors. 2SC2517 Datasheet


2SC2517 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC2517

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 150 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 12 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: TO220

2SC2517 Transistor Equivalent Substitute - Cross-Reference Search


2SC2517 Datasheet (PDF)

1.1. 2sc2517.pdf Size:132K _nec


DATA SHEET SILICON POWER TRANSISTOR 2SC2517 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC2517 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm) speed switching. This transistor is ideal for use in drivers such as switching regulators, DC/DC converters, high-frequency power amplifiers. FEATURES ow collector saturation voltage: VCE(s

1.2. 2sc2517.pdf Size:99K _savantic


SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2517 DESCRIPTION With TO-220C package Low collector saturation voltage Wide area of safe operation APPLICATIONS Switching regulators DC-DC converters High frequency power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratin

 1.3. 2sc2517.pdf Size:222K _inchange_semiconductor


isc Silicon NPN Power Transistor 2SC2517 DESCRIPTION ·Low Collector Saturation Voltage ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-speed switching, and is ideal for use as a driver in devices such as switching reglators,DC/DC converters, and high frequency power amplifiers. ABSOLUTE MAXIM

Datasheet: 2SC2508 , 2SC2509 , 2SC251 , 2SC2510 , 2SC2511 , 2SC2512 , 2SC2516 , 2SC2516A , S9014 , 2SC2517O , 2SC2517R , 2SC2517Y , 2SC2518 , 2SC2518R , 2SC2518Y , 2SC2519 , 2SC251A .


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