2SC2517 Datasheet and Replacement

DATA SHEETSILICON POWER TRANSISTOR2SC2517NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SC2517 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm)speed switching. This transistor is ideal for use in drivers such asswitching regulators, DC/DC converters, high-frequency poweramplifiers.FEATURES ow collector saturation voltage:

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2517 DESCRIPTION With TO-220C package Low collector saturation voltage Wide area of safe operation APPLICATIONS Switching regulators DC-DC converters High frequency power amplifiers PINNING PIN DESCRIPTION1 Base Collector;connected to 2mounting base 3 Emitter Absolute maxi

isc Silicon NPN Power Transistor 2SC2517DESCRIPTIONLow Collector Saturation VoltageFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-speed switching, and is ideal for useas a driver in devices such as switching reglators,DC/DCconverters, and high frequency power amplifiers.ABSOLUTE MAXIM

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC2517DESCRIPTIONLow Collector Saturation VoltageFast Switching SpeedAPPLICATIONSDesigned for high-speed switching, and is ideal for useas a driver in devices such as switching reglators,DC/DCconverters, and high frequency power amplifiers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

2SC2510 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (28V SUPPLY VOLTAGE USE) Unit in mm Specified 28V, 28MHz Characteristics Output Power : Po = 150W (Min.) PEP Power Gain : Gp = 12.2dB (Min.) Collector Efficiency : C = 35% (Min.) Intermodulation Distortion: IMD = -30dB (Max.) MAXIMUM RATINGS (T

2SC2512Silicon NPN Triple DiffusedApplication VHF Amplifier VHF TV Tuner, MixerOutlineTO-92 (2)1. Base2. Emitter3. Collector3212SC2512Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 20 VEmitter to base voltage VEBO 3VCollector current IC 50 mACollector power dissipati

HG RF POWER TRANSISTOR2SC2510ASemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTOR Specified 28V, 28MHz Characteristics Output Power : Po = 150WPEP (Min.) Power Gain : Gp = 12.2dB (Min.) Collector Efficiency = 35% (Min.) : C_30dB Intermodulation Distortion : IMD = (Max.) ABSOLUTE MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNIT Collecto

isc Silicon NPN Power Transistor 2SC2518DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)Low Collector Saturation VoltageHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator, DC-DC converter andultrasonic applicance applications.ABSOLUTE MAXIM

isc Silicon NPN Power Transistor 2SC2516DESCRIPTIONLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-speed switching, and is ideal for useas a driver in devices such as switching reglators,DC/DCconverters, and high frequency power amplifiers.ABSOLUTE MAXIMUM RATINGS(T =25)a