2SC2517 Todos los transistores

DATA SHEET SILICON POWER TRANSISTOR 2SC2517 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC2517 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT mm) speed switching. This transistor is ideal for use in drivers such as switching regulators, DC/DC converters, high-frequency power amplifiers. FEATURES ow collector saturation voltage ... See More ⇒

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2517 DESCRIPTION With TO-220C package Low collector saturation voltage Wide area of safe operation APPLICATIONS Switching regulators DC-DC converters High frequency power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maxi... See More ⇒

isc Silicon NPN Power Transistor 2SC2517 DESCRIPTION Low Collector Saturation Voltage Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-speed switching, and is ideal for use as a driver in devices such as switching reglators,DC/DC converters, and high frequency power amplifiers. ABSOLUTE MAXIM... See More ⇒

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC2517 DESCRIPTION Low Collector Saturation Voltage Fast Switching Speed APPLICATIONS Designed for high-speed switching, and is ideal for use as a driver in devices such as switching reglators,DC/DC converters, and high frequency power amplifiers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT ... See More ⇒

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2SC2510 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510 2 30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (28V SUPPLY VOLTAGE USE) Unit in mm Specified 28V, 28MHz Characteristics Output Power Po = 150W (Min.) PEP Power Gain Gp = 12.2dB (Min.) Collector Efficiency C = 35% (Min.) Intermodulation Distortion IMD = -30dB (Max.) MAXIMUM RATINGS (T... See More ⇒

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2SC2512 Silicon NPN Triple Diffused Application VHF Amplifier VHF TV Tuner, Mixer Outline TO-92 (2) 1. Base 2. Emitter 3. Collector 3 2 1 2SC2512 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3V Collector current IC 50 mA Collector power dissipati... See More ⇒

HG RF POWER TRANSISTOR 2SC2510A Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Specified 28V, 28MHz Characteristics Output Power Po = 150WPEP (Min.) Power Gain Gp = 12.2dB (Min.) Collector Efficiency = 35% (Min.) C _30dB Intermodulation Distortion IMD = (Max.) ABSOLUTE MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC SYMBOL RATING UNIT Collecto... See More ⇒

isc Silicon NPN Power Transistor 2SC2518 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) Low Collector Saturation Voltage High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator, DC-DC converter and ultrasonic applicance applications. ABSOLUTE MAXIM... See More ⇒

isc Silicon NPN Power Transistor 2SC2516 DESCRIPTION Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-speed switching, and is ideal for use as a driver in devices such as switching reglators,DC/DC converters, and high frequency power amplifiers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a ... See More ⇒