2SC2517 Datasheet. Equivalente

 ..1. Size:132K  nec
 2sc2517.pdf

DATA SHEET SILICON POWER TRANSISTOR 2SC2517 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC2517 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT mm) speed switching. This transistor is ideal for use in drivers such as switching regulators, DC/DC converters, high-frequency power amplifiers. FEATURES ow collector saturation voltage

 ..2. Size:99K  savantic
 2sc2517.pdf

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2517 DESCRIPTION With TO-220C package Low collector saturation voltage Wide area of safe operation APPLICATIONS Switching regulators DC-DC converters High frequency power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maxi

 ..3. Size:222K  inchange semiconductor
 2sc2517.pdf

isc Silicon NPN Power Transistor 2SC2517 DESCRIPTION Low Collector Saturation Voltage Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-speed switching, and is ideal for use as a driver in devices such as switching reglators,DC/DC converters, and high frequency power amplifiers. ABSOLUTE MAXIM

 0.1. Size:176K  cn sptech
 2sc2517m 2sc2517l 2sc2517k.pdf

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC2517 DESCRIPTION Low Collector Saturation Voltage Fast Switching Speed APPLICATIONS Designed for high-speed switching, and is ideal for use as a driver in devices such as switching reglators,DC/DC converters, and high frequency power amplifiers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT

 8.1. Size:237K  1
 2sc2519.pdf

 8.2. Size:165K  toshiba
 2sc2510.pdf

2SC2510 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510 2 30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (28V SUPPLY VOLTAGE USE) Unit in mm Specified 28V, 28MHz Characteristics Output Power Po = 150W (Min.) PEP Power Gain Gp = 12.2dB (Min.) Collector Efficiency C = 35% (Min.) Intermodulation Distortion IMD = -30dB (Max.) MAXIMUM RATINGS (T

 8.3. Size:170K  nec
 2sc2518.pdf

 8.4. Size:33K  hitachi
 2sc2512.pdf

2SC2512 Silicon NPN Triple Diffused Application VHF Amplifier VHF TV Tuner, Mixer Outline TO-92 (2) 1. Base 2. Emitter 3. Collector 3 2 1 2SC2512 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3V Collector current IC 50 mA Collector power dissipati

 8.5. Size:339K  hgsemi
 2sc2510a.pdf

HG RF POWER TRANSISTOR 2SC2510A Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Specified 28V, 28MHz Characteristics Output Power Po = 150WPEP (Min.) Power Gain Gp = 12.2dB (Min.) Collector Efficiency = 35% (Min.) C _30dB Intermodulation Distortion IMD = (Max.) ABSOLUTE MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC SYMBOL RATING UNIT Collecto

 8.6. Size:221K  inchange semiconductor
 2sc2518.pdf

isc Silicon NPN Power Transistor 2SC2518 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) Low Collector Saturation Voltage High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator, DC-DC converter and ultrasonic applicance applications. ABSOLUTE MAXIM

 8.7. Size:222K  inchange semiconductor
 2sc2516.pdf

isc Silicon NPN Power Transistor 2SC2516 DESCRIPTION Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-speed switching, and is ideal for use as a driver in devices such as switching reglators,DC/DC converters, and high frequency power amplifiers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a