All Transistors. 2SC253 Datasheet

 

2SC253 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC253
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.03 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 450 MHz
   Collector Capacitance (Cc): 2 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO72

 2SC253 Transistor Equivalent Substitute - Cross-Reference Search

   

2SC253 Datasheet (PDF)

 0.1. Size:185K  toshiba
2sc2532.pdf

2SC253
2SC253

2SC2532 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2532 Audio Frequency Amplifier Applications Unit: mm Driver Stage for LED Lamp Applications Temperature Compensation Applications High hFE: hFE (1) = 5000 (min) (IC = 10 mA) h (2) = 10000 (min) (IC = 100 mA) FEMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base

 0.2. Size:810K  kexin
2sc2532.pdf

2SC253
2SC253

SMD Type TransistorsNPN Transistors2SC2532SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=300mA1 2 Collector Emitter Voltage VCEO=40V+0.10.95-0.1 0.1+0.05-0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collect

 0.3. Size:172K  inchange semiconductor
2sc2535.pdf

2SC253
2SC253

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2535DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25

 0.4. Size:184K  inchange semiconductor
2sc2534.pdf

2SC253
2SC253

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2534DESCRIPTIONCollector-Emitter Breakdown Voltage-:V = 150(V)(Min.)(BR)CEO100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed high voltage switching applicationSwitching regulator applicationsHigh speed DC-DC converter applicatio

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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