2SC2551O Specs and Replacement
Type Designator: 2SC2551O
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO92
2SC2551O Substitution
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2SC2551O datasheet
2SC2551 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2551 Industrial Applications Hight Voltage Control Applications Unit mm Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications High voltage VCBO = 300 V, V = 300 V CEO Low saturation voltage V = 0.5 V (max) CE (sat) Small collector output capacita... See More ⇒
2SC2551 0.1 A , 300 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 High Voltage G H Low Saturation Voltage Small Collector Output Capacitance Complementary to 2SA1091 J Emitter A D Collector Base B CLASSIFICATION OF hFE(1) K Millimet... See More ⇒
2SC2551(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High voltage Low saturation voltage Small collector output capacitance Complementary to 2SA1091 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V Dimensions in inches and (millimeters) VCEO Collector-Emitter Vo... See More ⇒
Detailed specifications: 2SC2545, 2SC2546, 2SC2547, 2SC2548, 2SC2549, 2SC255, 2SC2550, 2SC2551, TIP42, 2SC2551R, 2SC2552, 2SC2553, 2SC2555, 2SC2556, 2SC2556A, 2SC2557, 2SC2558
Keywords - 2SC2551O pdf specs
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