2SC2578 Specs and Replacement
Type Designator: 2SC2578
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 70 W
Maximum Collector-Base Voltage |Vcb|: 140 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Collector Capacitance (Cc): 150 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: TO218
- BJT ⓘ Cross-Reference Search
2SC2578 datasheet
..1. Size:48K wingshing
2sc2578.pdf 
2SC2578 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SA1104 ABSOLUTE MAXIMUM RATING (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 140 V Collector-Emitter Voltage VCEO 100 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 7 A ... See More ⇒
..2. Size:106K jmnic
2sc2578.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC2578 DESCRIPTION With TO-3PN package Complementary to 2SA1104 High Power Dissipation High Current Capability APPLICATIONS Audio power amplifier DC TO DC Converter PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and sym... See More ⇒
..3. Size:202K inchange semiconductor
2sc2578.pdf
isc Silicon NPN Power Transistor 2SC2578 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1103 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V... See More ⇒
8.1. Size:119K nec
2sc2570a.pdf
DATA SHEET NPN SILICON TRANSISTOR 2SC2570A HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC2570A is designed for use in Low Noise Amplifier of VHF & UHF stages. FEATURES Low noise and high gain NF = 1.5 dB TYP., Ga = 8 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5.0 mA Wide dynamic range NF = 1.9 dB, Ga = 9 dB @f = 1 GHz, VCE = 10 V, IC = 1... See More ⇒
8.2. Size:25K wingshing
2sc2577.pdf
2SC2577 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SA1102 ABSOLUTE MAXIMUM RATING (Ta=25 C C) C C Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 160 V Collector-Emitter Voltage VCEO 120 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 8 A Collector... See More ⇒
8.3. Size:146K jmnic
2sc2577.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC2577 DESCRIPTION With TO-3PN package Complement to type 2SA1102 High power dissipation High current capability APPLICATIONS Audio power amplifier DC-DC converter PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Abs... See More ⇒
8.4. Size:153K jmnic
2sc2579.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC2579 DESCRIPTION With TO-3PN package High power dissipation High current capability APPLICATIONS For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings... See More ⇒
8.5. Size:201K inchange semiconductor
2sc2577.pdf
isc Silicon NPN Power Transistor 2SC2577 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1102 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V ... See More ⇒
8.6. Size:177K inchange semiconductor
2sc2570a.pdf
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2570A DESCRIPTION Low Noise and High Gain NF = 1.5 dB TYP. Ga = 8 dB TYP. @f = 1.0 GHz, V = 10 V, I = 5 mA CE C Wide Dynamic Range NF = 1.9 dB TYP. Ga = 9 dB TYP. @f = 1.0 GHz, V = 10 V, I = 15 mA CE C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS... See More ⇒
8.7. Size:202K inchange semiconductor
2sc2579.pdf
isc Silicon NPN Power Transistor 2SC2579 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Good Linearity of h FE High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Col... See More ⇒
Detailed specifications: 2SC2571, 2SC2571-1, 2SC2571-2, 2SC2572, 2SC2573, 2SC2575, 2SC2575L, 2SC2577, TIP120, 2SC2579, 2SC258, 2SC2580, 2SC2581, 2SC2582, 2SC2584, 2SC2586, 2SC2587
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