2SC2625 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC2625
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 450 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO218
2SC2625 Transistor Equivalent Substitute - Cross-Reference Search
2SC2625 Datasheet (PDF)
..1. 2sc2625.pdf Size:129K _mospec
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..2. 2sc2625.pdf Size:216K _inchange_semiconductor
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2625DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25
0.1. 2sc2625b.pdf Size:238K _nell
RoHS 2SC2625B RoHS SEMICONDUCTORNell High Power ProductsSilicon NPN triple diffusion planar transistor(High voltage switching transistor)10A/400V/80W15.60.44.80.29.62.00.13.20,1TO-3P(B)23FEATURES+0.2+0.20.651.05-0.1-0.1 High-speed switching High collector to base voltage VCBO5.450.1 5.450.11.4 Satisfactory linearity of foward cur
8.1. 2sc2626.pdf Size:101K _fuji
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
8.2. 2sc2620.pdf Size:24K _hitachi
2SC2620Silicon NPN Epitaxial PlanarApplicationVHF amplifier, Local oscillatorOutlineMPAK311. Emitter2. Base23. Collector2SC2620Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 20 VEmitter to base voltage VEBO 4VCollector current IC 20 mACollector power dissipation PC 100 mWJ
8.3. 2sc2620.pdf Size:337K _kexin
SMD Type TransistorsNPN Transistors2SC2620SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=20mA1 2 Collector Emitter Voltage VCEO=20V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect
8.4. 2sc2621 3da2621.pdf Size:231K _foshan
2SC2621(3DA2621) NPN /SILICON NPN TRANSISTOR : Purpose: Color TV chroma output applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 300 V CBO V 300 V CEO V 6.5 V EBO I 200 mA C I 700 mA CP P (Ta=25) 1.2 W CP (Tc=25) 10 W CT 150
8.5. 2sc2626.pdf Size:213K _inchange_semiconductor
isc Silicon NPN Power Transistor 2SC2626DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXI
8.6. 2sc2624.pdf Size:213K _inchange_semiconductor
isc Silicon NPN Power Transistor 2SC2624DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXI
Datasheet: 2SC262 , 2SC2620 , 2SC2621 , 2SC2621C , 2SC2621D , 2SC2621E , 2SC2623 , 2SC2624 , TIP127 , 2SC2626 , 2SC2627 , 2SC2628 , 2SC2629 , 2SC263 , 2SC2630 , 2SC2631 , 2SC2632 .