Биполярный транзистор 2SC2625 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC2625
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 80 W
Макcимально допустимое напряжение коллектор-база (Ucb): 450 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 10 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 10
Корпус транзистора: TO218
2SC2625 Datasheet (PDF)
2sc2625.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC2625DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
2sc2625.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2625DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25
2sc2625b.pdf
RoHS 2SC2625B RoHS SEMICONDUCTORNell High Power ProductsSilicon NPN triple diffusion planar transistor(High voltage switching transistor)10A/400V/80W15.60.44.80.29.62.00.13.20,1TO-3P(B)23FEATURES+0.2+0.20.651.05-0.1-0.1 High-speed switching High collector to base voltage VCBO5.450.1 5.450.11.4 Satisfactory linearity of foward cur
2sc2625t4tl.pdf
2SC2625T4TLSilicon NPN Power TransistorDESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 450 V
2sc2626.pdf
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
2sc2620.pdf
2SC2620Silicon NPN Epitaxial PlanarApplicationVHF amplifier, Local oscillatorOutlineMPAK311. Emitter2. Base23. Collector2SC2620Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 20 VEmitter to base voltage VEBO 4VCollector current IC 20 mACollector power dissipation PC 100 mWJ
2sc2620.pdf
SMD Type TransistorsNPN Transistors2SC2620SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=20mA1 2 Collector Emitter Voltage VCEO=20V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect
2sc2621 3da2621.pdf
2SC2621(3DA2621) NPN /SILICON NPN TRANSISTOR : Purpose: Color TV chroma output applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 300 V CBO V 300 V CEO V 6.5 V EBO I 200 mA C I 700 mA CP P (Ta=25) 1.2 W CP (Tc=25) 10 W CT 150
2sc2624.pdf
isc Silicon NPN Power Transistor 2SC2624DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXI
2sc2626.pdf
isc Silicon NPN Power Transistor 2SC2626DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXI
Другие транзисторы... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , D882 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
