Справочник транзисторов. 2SC2625

 

Биполярный транзистор 2SC2625 - описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SC2625

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 80 W

Макcимально допустимое напряжение коллектор-база (Ucb): 450 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V

Макcимальный постоянный ток коллектора (Ic): 10 A

Предельная температура PN-перехода (Tj): 150 °C

Статический коэффициент передачи тока (hfe): 10

Корпус транзистора: TO218

Аналоги (замена) для 2SC2625

 

 

2SC2625 Datasheet (PDF)

 ..1. Size:129K  mospec
2sc2625.pdf

2SC2625
2SC2625

AAA

 ..2. Size:174K  cn sptech
2sc2625.pdf

2SC2625
2SC2625

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC2625DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

 ..3. Size:216K  inchange semiconductor
2sc2625.pdf

2SC2625
2SC2625

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2625DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25

 0.1. Size:238K  nell
2sc2625b.pdf

2SC2625
2SC2625

RoHS 2SC2625B RoHS SEMICONDUCTORNell High Power ProductsSilicon NPN triple diffusion planar transistor(High voltage switching transistor)10A/400V/80W15.60.44.80.29.62.00.13.20,1TO-3P(B)23FEATURES+0.2+0.20.651.05-0.1-0.1 High-speed switching High collector to base voltage VCBO5.450.1 5.450.11.4 Satisfactory linearity of foward cur

 0.2. Size:1281K  cn sps
2sc2625t4tl.pdf

2SC2625
2SC2625

2SC2625T4TLSilicon NPN Power TransistorDESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 450 V

 8.1. Size:101K  fuji
2sc2626.pdf

2SC2625
2SC2625

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

 8.2. Size:24K  hitachi
2sc2620.pdf

2SC2625
2SC2625

2SC2620Silicon NPN Epitaxial PlanarApplicationVHF amplifier, Local oscillatorOutlineMPAK311. Emitter2. Base23. Collector2SC2620Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 20 VEmitter to base voltage VEBO 4VCollector current IC 20 mACollector power dissipation PC 100 mWJ

 8.3. Size:337K  kexin
2sc2620.pdf

2SC2625

SMD Type TransistorsNPN Transistors2SC2620SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=20mA1 2 Collector Emitter Voltage VCEO=20V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect

 8.4. Size:231K  foshan
2sc2621 3da2621.pdf

2SC2625
2SC2625

2SC2621(3DA2621) NPN /SILICON NPN TRANSISTOR : Purpose: Color TV chroma output applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 300 V CBO V 300 V CEO V 6.5 V EBO I 200 mA C I 700 mA CP P (Ta=25) 1.2 W CP (Tc=25) 10 W CT 150

 8.5. Size:213K  inchange semiconductor
2sc2626.pdf

2SC2625
2SC2625

isc Silicon NPN Power Transistor 2SC2626DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXI

 8.6. Size:213K  inchange semiconductor
2sc2624.pdf

2SC2625
2SC2625

isc Silicon NPN Power Transistor 2SC2624DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXI

Другие транзисторы... 2SC262 , 2SC2620 , 2SC2621 , 2SC2621C , 2SC2621D , 2SC2621E , 2SC2623 , 2SC2624 , BD135 , 2SC2626 , 2SC2627 , 2SC2628 , 2SC2629 , 2SC263 , 2SC2630 , 2SC2631 , 2SC2632 .

 

 
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