2SC2650 Specs and Replacement

Type Designator: 2SC2650

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 500 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: MT-200

 2SC2650 Substitution

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2SC2650 datasheet

 ..1. Size:211K  inchange semiconductor

2sc2650.pdf pdf_icon

2SC2650

isc Silicon NPN Power Transistor 2SC2650 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator applicaition. High voltage switching application. High speed DC-DC converter application. A... See More ⇒

 8.1. Size:167K  toshiba

2sc2655o 2sc2655y.pdf pdf_icon

2SC2650

2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655 Industrial Applications Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = 0.5 V (max) (IC = 1 A) High collector power dissipation PC = 900 mW High-speed switching tstg = 1.0 s (typ.) Complementary to 2SA1020. Absolute Maximum ... See More ⇒

 8.2. Size:148K  toshiba

2sc2655.pdf pdf_icon

2SC2650

2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655 Industrial Applications Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = 0.5 V (max) (IC = 1 A) High collector power dissipation PC = 900 mW High-speed switching tstg = 1.0 s (typ.) Complementary to 2SA1020. Absolute Maximum ... See More ⇒

 8.3. Size:96K  nec

2sc2654.pdf pdf_icon

2SC2650

DATA SHEET SILICON POWER TRANSISTOR 2SC2654 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT mm) Large current capacitance in small dimension IC(DC) = 7 A Low collector saturation voltage VCE(sat) = 0.3 V MAX. (IC = 3.0 A) Ideal for use in a lamp driver Complementary transistor 2SA1129 ABSOL... See More ⇒

Detailed specifications: 2SC2643, 2SC2644, 2SC2645, 2SC2646, 2SC2647, 2SC2648, 2SC2649, 2SC265, 2SD669, 2SC2651, 2SC2652, 2SC2653, 2SC2654, 2SC2655, 2SC2655O, 2SC2655Y, 2SC2656

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