2SC2657A Specs and Replacement

Type Designator: 2SC2657A

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 70 W

Maximum Collector-Base Voltage |Vcb|: 900 V

Maximum Collector-Emitter Voltage |Vce|: 500 V

Maximum Emitter-Base Voltage |Veb|: 8 V

Maximum Collector Current |Ic max|: 0.15 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 2.5 MHz

Forward Current Transfer Ratio (hFE), MIN: 8

Noise Figure, dB: -

Package: TO3

 2SC2657A Substitution

- BJT ⓘ Cross-Reference Search

 

2SC2657A datasheet

 7.1. Size:189K  inchange semiconductor

2sc2657.pdf pdf_icon

2SC2657A

isc Silicon NPN Power Transistor 2SC2657 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 500V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Collector-Base Voltage ... See More ⇒

 8.1. Size:167K  toshiba

2sc2655o 2sc2655y.pdf pdf_icon

2SC2657A

2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655 Industrial Applications Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = 0.5 V (max) (IC = 1 A) High collector power dissipation PC = 900 mW High-speed switching tstg = 1.0 s (typ.) Complementary to 2SA1020. Absolute Maximum ... See More ⇒

 8.2. Size:148K  toshiba

2sc2655.pdf pdf_icon

2SC2657A

2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655 Industrial Applications Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = 0.5 V (max) (IC = 1 A) High collector power dissipation PC = 900 mW High-speed switching tstg = 1.0 s (typ.) Complementary to 2SA1020. Absolute Maximum ... See More ⇒

 8.3. Size:96K  nec

2sc2654.pdf pdf_icon

2SC2657A

DATA SHEET SILICON POWER TRANSISTOR 2SC2654 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT mm) Large current capacitance in small dimension IC(DC) = 7 A Low collector saturation voltage VCE(sat) = 0.3 V MAX. (IC = 3.0 A) Ideal for use in a lamp driver Complementary transistor 2SA1129 ABSOL... See More ⇒

Detailed specifications: 2SC2652, 2SC2653, 2SC2654, 2SC2655, 2SC2655O, 2SC2655Y, 2SC2656, 2SC2657, MJE350, 2SC2658, 2SC2658A, 2SC2659, 2SC266, 2SC2660, 2SC2660A, 2SC2662, 2SC2664

Keywords - 2SC2657A pdf specs

 2SC2657A cross reference

 2SC2657A equivalent finder

 2SC2657A pdf lookup

 2SC2657A substitution

 2SC2657A replacement