2SC2660A Specs and Replacement
Type Designator: 2SC2660A
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 35 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: TO220
- BJT ⓘ Cross-Reference Search
2SC2660A datasheet
..1. Size:124K inchange semiconductor
2sc2660 2sc2660a.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2660 2SC2660A DESCRIPTION With TO-220 package Complement to type 2SA1133/1133A High VCEO Large PC APPLICATIONS Power amplifier applications TV vertical deflection applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ra... See More ⇒
7.1. Size:197K inchange semiconductor
2sc2660.pdf
isc Silicon NPN Power Transistor 2SC2660 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V (Min) (BR)CEO Large Collector Power Dissipation Complement to Type 2SA1133 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=... See More ⇒
8.1. Size:473K toshiba
2sc2669.pdf
2SC2669 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2669 High Frequency Amplifier Applications Unit mm High power gain Gpe = 30dB (typ.) (f = 10.7 MHz) Recommended for FM IF, OSC stage and AM CONV, IF stage. Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter voltage VC... See More ⇒
8.2. Size:502K toshiba
2sc2668.pdf
2SC2668 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2668 High Frequency Amplifier Applications Unit mm FM, RF, IF Amplifier Applications Small reverse transfer capacitance Cre = 0.70 pF (typ.) Low noise figure NF = 2.5dB (typ.) Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Colle... See More ⇒
8.3. Size:651K mcc
2sc2668-r.pdf
M C C TM 2SC2668-R Micro Commercial Components Micro Commercial Components 2SC2668-O 20736 Marilla Street Chatsworth CA 91311 2SC2668-Y Phone (818) 701-4933 Fax (818) 701-4939 NPN Features Lead Free Finish/Rohs Compliant ("P"Suffix designates Plastic-Encapsulate Compliant. See ordering information) Transistors Epoxy meets UL 94 V-0 flammability rating Moistu... See More ⇒
8.4. Size:651K mcc
2sc2668-o.pdf
M C C TM 2SC2668-R Micro Commercial Components Micro Commercial Components 2SC2668-O 20736 Marilla Street Chatsworth CA 91311 2SC2668-Y Phone (818) 701-4933 Fax (818) 701-4939 NPN Features Lead Free Finish/Rohs Compliant ("P"Suffix designates Plastic-Encapsulate Compliant. See ordering information) Transistors Epoxy meets UL 94 V-0 flammability rating Moistu... See More ⇒
8.5. Size:651K mcc
2sc2668-y.pdf
M C C TM 2SC2668-R Micro Commercial Components Micro Commercial Components 2SC2668-O 20736 Marilla Street Chatsworth CA 91311 2SC2668-Y Phone (818) 701-4933 Fax (818) 701-4939 NPN Features Lead Free Finish/Rohs Compliant ("P"Suffix designates Plastic-Encapsulate Compliant. See ordering information) Transistors Epoxy meets UL 94 V-0 flammability rating Moistu... See More ⇒
8.6. Size:134K secos
2sc2668.pdf
2SC2668 0.02A , 40V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92S Small Reverse Transfer Capacitance. Low Noise Figure. Millimeter REF. Min. Max. A 3.90 4.10 B 3.05 3.25 CLASSIFICATION OF hFE C 1.42 1.62 D 15.1 15.5 Product-Rank 2SC2668-R 2SC2668-O 2SC2... See More ⇒
8.7. Size:203K lge
2sc2668.pdf
2SC2668 TO-92S Transistor (NPN) 1. EMITTER TO-92S 2. COLLECTOR 1 2 3 3. BASE Features Small reverse transfer capacitance Low Noise Figure MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 4 V Dimensions in inches and (millimeters) IC Co... See More ⇒
8.8. Size:197K inchange semiconductor
2sc2665.pdf
isc Silicon NPN Power Transistor 2SC2665 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Ba... See More ⇒
Detailed specifications: 2SC2656, 2SC2657, 2SC2657A, 2SC2658, 2SC2658A, 2SC2659, 2SC266, 2SC2660, D667, 2SC2662, 2SC2664, 2SC2665, 2SC2666, 2SC2667, 2SC2668, 2SC2668O, 2SC2668R
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