2SC267A Specs and Replacement
Type Designator: 2SC267A
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 45 MHz
Forward Current Transfer Ratio (hFE), MIN: 35
Package: TO50-1
2SC267A Substitution
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2SC267A datasheet
2SC2670 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2670 High Frequency Amplifier Applications Unit mm AM High Frequency Amplifier Applications AM Frequency Converter Applications Low noise figure NF = 3.5dB (max) (f = 1 MHz) Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter v... See More ⇒
Transistor 2SC2671(F) Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit mm 5.0 0.2 4.0 0.2 Features Low noise figure NF. High gain. High transition frequency fT. Absolute Maximum Ratings (Ta=25 C) +0.2 +0.2 Parameter Symbol Ratings Unit 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 15 V 1.27 1.27 Collector to emitter voltage VCER* 14 V E... See More ⇒
Detailed specifications: 2SC2672, 2SC2673, 2SC2674, 2SC2675, 2SC2676, 2SC2677, 2SC2678, 2SC2679, TIP42C, 2SC268, 2SC2680, 2SC2681, 2SC2682, 2SC2682O, 2SC2682Y, 2SC2684, 2SC2685
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