2SC269 Specs and Replacement
Type Designator: 2SC269
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO50-1
2SC269 Substitution
- BJT ⓘ Cross-Reference Search
2SC269 datasheet
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2690 DESCRIPTION High voltage and high fT Complementary to 2SA1220 PNP transistor 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS The 2SC2690 is general purpose transistors designed For use in audio and radio frequency power amplifiers. Suitable... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2690 2SC2690A DESCRIPTION With TO-126 package Complement to type 2SA1220/1220A APPLICATIONS For use in audio and radio frequency power amplifiers PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CON... See More ⇒
Detailed specifications: 2SC2688, 2SC2688G, 2SC2688O, 2SC2688R, 2SC2688Y, 2SC2689, 2SC268A, 2SC268B, A940, 2SC2690, 2SC2690A, 2SC2690AO, 2SC2690AR, 2SC2690AY, 2SC2690O, 2SC2690R, 2SC2690Y
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