2SC2695 Specs and Replacement
Type Designator: 2SC2695
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 32 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 520 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Package: XM24
2SC2695 Substitution
- BJT ⓘ Cross-Reference Search
2SC2695 datasheet
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2690 DESCRIPTION High voltage and high fT Complementary to 2SA1220 PNP transistor 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS The 2SC2690 is general purpose transistors designed For use in audio and radio frequency power amplifiers. Suitable... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2690 2SC2690A DESCRIPTION With TO-126 package Complement to type 2SA1220/1220A APPLICATIONS For use in audio and radio frequency power amplifiers PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CON... See More ⇒
Detailed specifications: 2SC2690AY, 2SC2690O, 2SC2690R, 2SC2690Y, 2SC2691, 2SC2692, 2SC2693, 2SC2694, SS8050, 2SC27, 2SC270, 2SC2700, 2SC2701, 2SC2702, 2SC2703, 2SC2703O, 2SC2703Y
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