All Transistors. 2SC2705 Datasheet

 

2SC2705 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC2705

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.8 W

Maximum Collector-Base Voltage |Vcb|: 150 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 1.8 pF

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: TO92

2SC2705 Transistor Equivalent Substitute - Cross-Reference Search

 

2SC2705 Datasheet (PDF)

1.1. 2sc2705.pdf Size:125K _toshiba

2SC2705
2SC2705

2SC2705 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2705 Audio Frequency Amplifier Applications Unit: mm • Small collector output capacitance: C = 1.8 pF (typ.) ob • High transition frequency: fT = 200 MHz (typ.) • Complementary to 2SA1145. Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-em

4.1. 2sc2703.pdf Size:173K _toshiba

2SC2705
2SC2705



4.2. 2sc2707.pdf Size:224K _inchange_semiconductor

2SC2705
2SC2705

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2707 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min.) ·High Power Dissipation ·Complement to Type 2SA1147 APPLICATIONS ·Designed for power switching amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Colle

 4.3. 2sc2706.pdf Size:115K _inchange_semiconductor

2SC2705
2SC2705

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2706 DESCRIPTION Ў¤ With TO-3P(I) package Ў¤ High power dissipation APPLICATIONS Ў¤ For audio power amplifier and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3P(I)) and symbol DESCRIPTION Absolute maximum ratings(Ta=25

4.4. 2sc2703 to-92mod.pdf Size:216K _lge

2SC2705
2SC2705

2SC2703 TO-92MOD Transistor (NPN) TO-92MOD 1. EMITTER 1 2 2. COLLECTOR 3 3. BASE 5.800 6.200 Features 8.400 High DC Current Gain: hFE=100-320 8.800 0.900 1.100 0.400 0.600 13.800 14.200 1.500 TYP 2.900 Dimensions in inches and (millimeters) 3.100 MAXIMUM RATINGS (TA=25? unless otherwise noted) 0.000 1.600 Symbol Parameter 0.380 Value Units 0.400 4.700 C

 4.5. 2sc2703 to-92l.pdf Size:195K _lge

2SC2705
2SC2705

2SC2703 TO-92L Transistor (NPN) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 2 3 4.700 1 5.100 Features 7.800 High DC Current Gain: hFE=100-320 8.200 0.600 0.800 0.350 0.550 13.800 14.200 Dimensions in inches and (millimeters) 1.270 TYP MAXIMUM RATINGS (TA=25? unless otherwise noted) 2.440 2.640 Symbol Parameter 0.000 Value Units 1.600 0.300 0.350 Collector-Base Vo

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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