2SC2729 Specs and Replacement
Type Designator: 2SC2729
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 1300 MHz
Collector Capacitance (Cc): 0.8 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Package: TO117
2SC2729 Substitution
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2SC2729 datasheet
DATA SHEET SILICON TRANSISTOR 2SC2721 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-FREQUENCY AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT mm) Complementary transistor with 2SA1154 High PT in small dimension and high voltage PT = 1 W, VCEO = 60 V ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 60... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2723 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLU... See More ⇒
Detailed specifications: 2SC2721, 2SC2722, 2SC2723, 2SC2724, 2SC2725, 2SC2726, 2SC2727, 2SC2728, 2N3055, 2SC273, 2SC2730, 2SC2731, 2SC2732, 2SC2733, 2SC2734, 2SC2735, 2SC2736
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History: 2N6277 | 2SC4540
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