2SC274H Specs and Replacement
Type Designator: 2SC274H
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.08 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.01 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 80
Package: SP2
2SC274H Substitution
- BJT ⓘ Cross-Reference Search
2SC274H datasheet
isc Silicon NPN Power Transistor 2SC2749 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current switching industrial use General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME... See More ⇒
isc Silicon NPN Power Transistor 2SC2740 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) High Speed Switching Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U... See More ⇒
Detailed specifications: 2SC2741, 2SC2743, 2SC2744, 2SC2745, 2SC2746, 2SC2748, 2SC2749, 2SC2749A, 2SD1047, 2SC2751, 2SC2751A, 2SC2751N, 2SC2751O, 2SC2751R, 2SC2751Y, 2SC2752, 2SC2752N
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