All Transistors. 2SC2751A Datasheet

 

2SC2751A Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC2751A

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 120 W

Maximum Collector-Base Voltage |Vcb|: 500 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 175 °C

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: TO126

2SC2751A Transistor Equivalent Substitute - Cross-Reference Search

 

2SC2751A Datasheet (PDF)

7.1. 2sc2751.pdf Size:216K _inchange_semiconductor

2SC2751A 2SC2751A

isc Silicon NPN Power Transistor 2SC2751DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)High Current CapabilityHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed, high current switching industrialapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

8.1. 2sc2753.pdf Size:307K _toshiba

2SC2751A 2SC2751A

2SC2753 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2753 VHF~UHF Band Low Noise Amplifier Application Unit: mm Low noise figure, high gain NF = 1.5dB, |S |2 = 16dB (f = 500 MHz) 21e NF = 1.7dB, |S |2 = 10.5dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 17 VCollector-emitter v

8.2. 2sc2752.pdf Size:188K _nec

2SC2751A 2SC2751A

 8.3. 2sc2750.pdf Size:200K _no

2SC2751A 2SC2751A

8.4. 2sc2757.pdf Size:338K _kexin

2SC2751A

SMD Type TransistorsNPN Transistors2SC2757SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=15V+0.1+0.050.95 -0.1 0.1-0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collec

 8.5. 2sc2750.pdf Size:203K _inchange_semiconductor

2SC2751A 2SC2751A

isc Silicon NPN Power Transistor 2SC2750DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)High Current CapabilityHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed, high current switching industrialapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

8.6. 2sc2757.pdf Size:183K _inchange_semiconductor

2SC2751A 2SC2751A

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC2757DESCRIPTIONLow NoiseHigh Current-Gain Bandwidth ProductMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in VHF RF amplifier, local oscillator, mixer.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 30 VCBO

8.7. 2sc2752.pdf Size:210K _inchange_semiconductor

2SC2751A 2SC2751A

isc Silicon NPN Power Transistor 2SC2752DESCRIPTIONHigh breakdown voltageComplementary to 2SA1156 PNP transistor100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThe 2SC2752 is suitable for low power switchingregulator, DC-DC converter and high voltageswitch.ABSOLUTE MAXIMUM RATINGS(T =25)aSYM

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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