All Transistors. 2SC2751A Datasheet

 

2SC2751A Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC2751A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 120 W
   Maximum Collector-Base Voltage |Vcb|: 500 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO126

 2SC2751A Transistor Equivalent Substitute - Cross-Reference Search

   

2SC2751A Datasheet (PDF)

 7.1. Size:216K  inchange semiconductor
2sc2751.pdf

2SC2751A
2SC2751A

isc Silicon NPN Power Transistor 2SC2751DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)High Current CapabilityHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed, high current switching industrialapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

 8.1. Size:307K  toshiba
2sc2753.pdf

2SC2751A
2SC2751A

2SC2753 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2753 VHF~UHF Band Low Noise Amplifier Application Unit: mm Low noise figure, high gain NF = 1.5dB, |S |2 = 16dB (f = 500 MHz) 21e NF = 1.7dB, |S |2 = 10.5dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 17 VCollector-emitter v

 8.2. Size:188K  nec
2sc2752.pdf

2SC2751A
2SC2751A

 8.3. Size:200K  no
2sc2750.pdf

2SC2751A
2SC2751A

 8.4. Size:338K  kexin
2sc2757.pdf

2SC2751A

SMD Type TransistorsNPN Transistors2SC2757SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=15V+0.1+0.050.95 -0.1 0.1-0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collec

 8.5. Size:1709K  cn shikues
2sc2757.pdf

2SC2751A
2SC2751A

2SC2757TRANSISTOR (NPN)FEATURES SOT-23 AM/FM Amplifier, Local Oscillator of FM/VHF Tuner High Current Gain Bandwidth Product fT=1.1 GHz (Typ) 1BASE 2EMITTER 3COLLECTOR MARKING T33MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 5

 8.6. Size:210K  inchange semiconductor
2sc2752.pdf

2SC2751A
2SC2751A

isc Silicon NPN Power Transistor 2SC2752DESCRIPTIONHigh breakdown voltageComplementary to 2SA1156 PNP transistor100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThe 2SC2752 is suitable for low power switchingregulator, DC-DC converter and high voltageswitch.ABSOLUTE MAXIMUM RATINGS(T =25)aSYM

 8.7. Size:203K  inchange semiconductor
2sc2750.pdf

2SC2751A
2SC2751A

isc Silicon NPN Power Transistor 2SC2750DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)High Current CapabilityHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed, high current switching industrialapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

 8.8. Size:183K  inchange semiconductor
2sc2757.pdf

2SC2751A
2SC2751A

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC2757DESCRIPTIONLow NoiseHigh Current-Gain Bandwidth ProductMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in VHF RF amplifier, local oscillator, mixer.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 30 VCBO

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2SC945 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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