2SC2751Y Datasheet. Specs and Replacement

Type Designator: 2SC2751Y  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 120 W

Maximum Collector-Base Voltage |Vcb|: 500 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TOP3

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2SC2751Y datasheet

 7.1. Size:216K  inchange semiconductor

 2sc2751.pdf pdf_icon

2SC2751Y

isc Silicon NPN Power Transistor 2SC2751 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) High Current Capability High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed, high current switching industrial applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒

 8.1. Size:307K  toshiba

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2SC2751Y

2SC2753 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2753 VHF UHF Band Low Noise Amplifier Application Unit mm Low noise figure, high gain NF = 1.5dB, S 2 = 16dB (f = 500 MHz) 21e NF = 1.7dB, S 2 = 10.5dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 17 V Collector-emitter v... See More ⇒

 8.2. Size:188K  nec

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2SC2751Y

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2SC2751Y

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Detailed specifications: 2SC2749, 2SC2749A, 2SC274H, 2SC2751, 2SC2751A, 2SC2751N, 2SC2751O, 2SC2751R, 2SC4793, 2SC2752, 2SC2752N, 2SC2752O, 2SC2752R, 2SC2752Y, 2SC2753, 2SC2754, 2SC2755

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