2SC2752 Datasheet. Specs and Replacement
Type Designator: 2SC2752 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO126
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2SC2752 Substitution
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2SC2752 datasheet
isc Silicon NPN Power Transistor 2SC2752 DESCRIPTION High breakdown voltage Complementary to 2SA1156 PNP transistor 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS The 2SC2752 is suitable for low power switching regulator, DC-DC converter and high voltage switch. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM... See More ⇒
2SC2753 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2753 VHF UHF Band Low Noise Amplifier Application Unit mm Low noise figure, high gain NF = 1.5dB, S 2 = 16dB (f = 500 MHz) 21e NF = 1.7dB, S 2 = 10.5dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 17 V Collector-emitter v... See More ⇒
Detailed specifications: 2SC2749A, 2SC274H, 2SC2751, 2SC2751A, 2SC2751N, 2SC2751O, 2SC2751R, 2SC2751Y, MJE340, 2SC2752N, 2SC2752O, 2SC2752R, 2SC2752Y, 2SC2753, 2SC2754, 2SC2755, 2SC2755O
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BJT Parameters and How They Relate
History: BFV94N | RN4983FE | BDX14 | RN2314 | HA7502 | RN1904AFS | NSS40200UW6T1G
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