2N1899 Datasheet. Specs and Replacement

Type Designator: 2N1899  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 125 W

Maximum Collector-Base Voltage |Vcb|: 140 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Collector Current |Ic max|: 20 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 50 MHz

Collector Capacitance (Cc): 1000 pF

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: MT38-1

 2N1899 Substitution

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2N1899 datasheet

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N1893 NPN medium power transistor 1997 Apr 17 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN medium power transistor 2N1893 FEATURES PINNING Low current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 80 V). 1 emitt... See More ⇒

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Detailed specifications: 2N1893L, 2N1893S, 2N1893UB, 2N1894, 2N1895, 2N1896, 2N1897, 2N1898, S9013, 2N19, 2N190, 2N1900, 2N1901, 2N1902, 2N1903, 2N1904, 2N1905

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