2N19 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N19
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.07 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 100 °C
Transition Frequency (ft): 2 MHz
Collector Capacitance (Cc): 40 pF
Forward Current Transfer Ratio (hFE), MIN: 37
Noise Figure, dB: -
Package: TO30
2N19 Transistor Equivalent Substitute - Cross-Reference Search
2N19 Datasheet (PDF)
2n1991.pdf
2N1991Dimensions in mm (inches). Bipolar PNP Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar PNP Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 20V dia.IC = 0.3A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1
rt2n19m.pdf
RT2N19M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N19M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=2.2k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circu
Datasheet: 2N1893S , 2N1893UB , 2N1894 , 2N1895 , 2N1896 , 2N1897 , 2N1898 , 2N1899 , TIP2955 , 2N190 , 2N1900 , 2N1901 , 2N1902 , 2N1903 , 2N1904 , 2N1905 , 2N1906 .
