2SC2829 Datasheet. Specs and Replacement

Type Designator: 2SC2829  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 500 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 13

Noise Figure, dB: -

Package: TO3

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2SC2829 datasheet

 8.1. Size:107K  toshiba

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2SC2829

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 8.2. Size:121K  mospec

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2SC2829

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 8.3. Size:195K  inchange semiconductor

2sc2827.pdf pdf_icon

2SC2829

isc Silicon NPN Power Transistor 2SC2827 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) Fast Switching Speed Collector-Emitter Saturation Voltage- V = 0.7V(Max.)@ I = 3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage,high-speed,power switching applicat... See More ⇒

Detailed specifications: 2SC2821E, 2SC2821F, 2SC2822, 2SC2823, 2SC2825, 2SC2826, 2SC2827, 2SC2828, NJW0281G, 2SC282A, 2SC282H, 2SC283, 2SC2830, 2SC2831, 2SC2831A, 2SC2832, 2SC2832A

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